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器件描述：Silicon PNP epitaxial planer typeFor low-frequency amplification)
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：35.94KB
文件页数：2
PDF阅读：2SB1537.pdf (点击阅读器件资料)
摘要：
1
Transistor
2SB1537
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD2357
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
.
l Large collector power dissipation P
C
.
l Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
n
Absolute Maximum Ratings (Ta=25?C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
4.5– 0.1
2.6
–
0.1
2.5
–
0.1
0.4max.
1.0
+0.1 –0.2
4.0
+0.25 –0.20
3.0– 0.15
1.5– 0.1
0.4– 0.08
0.5– 0.08
1.5– 0.1
0.4– 0.04
1.6– 0.2
45°
marking
321
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
–10
–10
–5
–1.2
–1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
?C
?C
n
Electrical Characteristics (Ta=25?C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –7V, I
E
= 0
I
C
= –10m A, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –2V, I
C
= –100mA
**
I
C
= –500mA, I
B
= –5mA
**
V
CB
= –5V, I
E
= 50mA, f = 200MHz
V
CB
= –5V, I
E
= 0, f = 1MHz
min
–10
–10
–5
200
typ
120
45
max
–1
800
– 0.15
Unit
m A
V
V
V
V
MHz
pF
**
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
Marking symbol : 1L
相关器件：2SD2357
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