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器件描述：Silicon PNP epitaxial planar type Darlington(For power amplification)
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：70.96KB
文件页数：3
PDF阅读：2SB1503.pdf (点击阅读器件资料)
摘要：
1
Power Transistors
2SB1503
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2276
n
Features
l Optimum for 110W HiFi output
l High foward current transfer ratio h
FE
: 5000 to 30000
l Low collector to emitter saturation voltage V
CE(sat)
: < –2.5V
n
Absolute Maximum Ratings (T
C
=25?C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–160
–140
–5
–12
–7
120
3.5
150
–55 to +150
Unit
V
V
V
A
A
W
?C
?C
n
Electrical Characteristics (T
C
=25?C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –160V, I
E
= 0
V
CE
= –140V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –5V, I
C
= –1A
V
CE
= –5V, I
C
= –7A
I
C
= –7A, I
B
= –7mA
I
C
= –7A, I
B
= –7mA
V
CE
= –10V, I
C
= – 0.5A, f = 1MHz
I
C
= –7A, I
B1
= –7mA, I
B2
= 7mA,
V
CC
= –50V
min
–140
2000
5000
typ
20
1.0
1.5
1.2
max
–100
–100
–100
30000
–2.5
–3.0
Unit
m A
m A
m A
V
V
V
MHz
m s
m s
m s
T
C
=25 C
Ta=25 C
Unit: mm
Internal Connection
B
C
E
*
h
FE2
Rank classification
Rank Q S P
h
FE2
5000 to 15000 7000 to 21000 8000 to 30000
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0– 0.5
6.0
10.0
26.0
–
0.5
20.0
–
0.5
1.5
2.5
Solder Dip
10.9– 0.5
123
2.0– 0.3
3.0– 0.3
1.0– 0.2
5.0– 0.3
3.0
4.0
2.0
5.45– 0.3
0.6– 0.2
1.5
2.7– 0.3
1.5
2.0
f 3.3– 0.2
3.0
相关器件：2SD2276
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