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器件描述：Silicon PNP epitaxial planer type(For low-frequency output amplification)
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：37.85KB
文件页数：2
PDF阅读：2SB1297.pdf (点击阅读器件资料)
摘要：
1
Transistor
2SB1297
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1937
n
Features
l Extremely satisfactory linearity of the forward current transfer
ratio h
FE
.
l High transition frequency f
T
.
l Makes up a complementary pair with 2SD1937, which is opti-
mum for the pre-driver stage of a 40 to 60W output amplifier.
n
Absolute Maximum Ratings (Ta=25?C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
TO–92NL Package
5.0– 0.2
13.5
–
0.5
0.7
–
0.2
8.0
–
0.2
1.27
123
1.27
4.0– 0.2
0.45
+0.15
–0.10.45
+0.15
–0.1
2.3
–
0.2
0.7– 0.1
2.54– 0.15
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–120
–120
–5
–1
– 0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
?C
?C
n
Electrical Characteristics (Ta=25?C)
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= –0.1mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
*2
V
CE
= –5V, I
C
= –500mA
*2
I
C
= –300mA, I
B
= –30mA
*2
I
C
= –300mA, I
B
= –30mA
*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–120
–5
90
50
typ
250
max
220
–1.0
–1.2
30
Unit
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank Q R
h
FE1
90 ~ 155 130 ~ 220
*2
Pulse measurement
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