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2SB1221
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：Silicon PNP epitaxial planer type 器件厂商：PANASONIC [Panasonic Semiconductor] 厂商主页：http://www.panasonic.co.jp/semicon/e-index.html 文件大小：46.4KB 文件页数：3 PDF阅读：2SB1221.pdf (点击阅读器件资料) 摘要： 1 Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 n Features l Low collector to emitter saturation voltage V CE(sat) . l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25?C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base TO–92NL Package 5.0– 0.2 13.5 – 0.5 0.7 – 0.2 8.0 – 0.2 1.27 123 1.27 4.0– 0.2 0.45 +0.15 –0.10.45 +0.15 –0.1 2.3 – 0.2 0.7– 0.1 2.54– 0.15 Symbol V CBO V CEO V EBO I CP I C P C T j T stg Ratings –250 –200 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA W ?C ?C n Electrical Characteristics (Ta=25?C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO V CEO V EBO h FE * V CE(sat) f T C ob Conditions V CB = –12V, I E = 0 I C = –100m A, I B = 0 I E = –1m A, I C = 0 V CE = –10V, I C = –5mA I C = –50mA, I B = –5mA V CB = –10V, I E = 10mA, f = 200MHz V CB = –10V, I E = 0, f = 1MHz min –200 –5 60 50 typ 80 5 max –2 220 –1.5 10 Unit m A V V V MHz pF * h FE Rank classification Rank Q R h FE 60 ~ 150 100 ~ 220 相关器件：2SC3941

2SB1221

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：Silicon PNP epitaxial planer type
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：46.4KB
文件页数：3
PDF阅读：2SB1221.pdf (点击阅读器件资料)

摘要：
1
Transistor
2SB1221
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC3941
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
.
l Allowing supply with the radial taping.
n
Absolute Maximum Ratings (Ta=25?C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
TO–92NL Package
5.0– 0.2
13.5
–
0.5
0.7
–
0.2
8.0
–
0.2
1.27
123
1.27
4.0– 0.2
0.45
+0.15
–0.10.45
+0.15
–0.1
2.3
–
0.2
0.7– 0.1
2.54– 0.15
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–250
–200
–5
–100
–70
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
?C
?C
n
Electrical Characteristics (Ta=25?C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –12V, I
E
= 0
I
C
= –100m A, I
B
= 0
I
E
= –1m A, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –50mA, I
B
= –5mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–200
–5
60
50
typ
80
5
max
–2
220
–1.5
10
Unit
m A
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank Q R
h
FE
60 ~ 150 100 ~ 220

相关器件：2SC3941

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