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器件描述：For Low-Voltage Switching
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：85.08KB
文件页数：4
PDF阅读：2SB0952.pdf (点击阅读器件资料)
摘要：
Power Transistors
1
Publication date: March 2003 SJD00031AED
2SB0952 (2SB952), 2SB0952A (2SB952A)
Silicon PNP epitaxial planar type
For low-voltage switching
■ Features
? Low collector-emitter saturation voltage V
CE(sat)
? High-speed switching
? N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage
2SB0952 V
CBO
?40 V
(Emitter open)
2SB0952A ?50
Collector-emitter voltage
2SB0952 V
CEO
?20 V
(Base open)
2SB0952A ?40
Emitter-base voltage (Collector open) V
EBO
?5V
Collector current I
C
?7A
Peak collector current I
CP
?12 A
Collector power dissipation P
C
30 W
T
a
= 25°C 1.3
Junction temperature T
j
150 °C
Storage temperature T
stg
?55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB0952 V
CEO
I
C
= ?10 mA, I
B
= 0 ?20 V
(Base open)
2SB0952A ?40
Collector-base cutoff
2SB0952 I
CBO
V
CB
= ?40 V, I
E
= 0 ?50 ?A
current (Emitter open)
2SB0952A V
CB
= ?50 V, I
E
= 0 ?50
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= ?5 V, I
C
= 0 ?50 ?A
Forward current transfer ratio h
FE1
V
CE
= ?2 V, I
C
= ? 0.1 A 45 ?
h
FE2
*
V
CE
= ?2 V, I
C
= ?2 A 60 260
Collector-emitter saturation voltage V
CE(sat)
I
C
= ?5 A, I
B
= ? 0.16 A ? 0.6 V
Base-emitter saturation voltage V
BE(sat)
I
C
= ?5 A, I
B
= ? 0.16 A ?1.5 V
Transition frequency f
T
V
CE
= ?10 V, I
C
= ? 0.5 A, f = 10 MHz 150 MHz
Collector output capacitance C
ob
V
CB
= ?10 V, I
E
= 0, f = 1 MHz 140 MHz
(Common base, input open circuited)
Turn-on time t
on I
C
= ?2 A
0.1 ?s
Storage time t
stg
I
B1
= ?66 mA, I
B2
= 66 mA 0.5 ?s
Fall time t
f
V
CC
= ?20 V
0.1 ?s
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
N-G1 Package
8.5±0.2 3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0) 1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±0
.5
14.4
±
0.5
Note) Self-supported type package is also prepared.
Note) The part numbers in the parenthesis show conventional part number.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank R Q P
h
FE2
60 to 120 90 to 180 130 to 260
相关器件：2SB952A 2SB952 2SB0952A
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