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器件描述：For Low-Voltage Switching
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：85.5KB
文件页数：4
PDF阅读：2SB0948.pdf (点击阅读器件资料)
摘要：
Power Transistors
1
Publication date: April 2003 SJD00027BED
2SB0948 (2SB948), 2SB0948A (2SB948A)
Silicon PNP epitaxial planar type
For low-voltage switching
■ Features
? Low collector-emitter saturation voltage V
CE(sat)
? High-speed switching
? Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter Symbol Rating Unit
Collector-base voltage
2SB0948 V
CBO
?40 V
(Emitter open)
2SB0948A ?50
Collector-emitter voltage
2SB0948 V
CEO
?20 V
(Base open)
2SB0948A ?40
Emitter-base voltage (Collector open) V
EBO
?5V
Collector current I
C
?10 A
Peak collector current I
CP
?20 A
Collector power dissipation P
C
40 W
T
a
= 25°C2
Junction temperature T
j
150 °C
Storage temperature T
stg
?55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB0948 V
CEO
I
C
= ?10 mA, I
B
= 0 ?20 V
(Base open)
2SB0948A ?40
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= ?40 V, I
E
= 0 ?50 ?A
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= ?5 V, I
C
= 0 ?50 ?A
Forward current transfer ratio h
FE1
V
CE
= ?2 V, I
C
= ? 0.1 A 45 ?
h
FE2
*
V
CE
= ?2 V, I
C
= ?3 A 60 260
Collector-emitter saturation voltage V
CE(sat)
I
C
= ?10 A, I
B
= ? 0.33 A ? 0.6 V
Base-emitter saturation voltage V
BE(sat)
I
C
= ?10 A, I
B
= ? 0.33 A ?1.5 V
Transition frequency f
T
V
CE
= ?10 V, I
C
= ? 0.5 A, f = 10 MHz 100 MHz
Collector output capacitance C
ob
V
CB
= ?10 V, I
E
= 0, f = 1 MHz 400 pF
(Common base, input open circuited)
Turn-on time t
on
I
C
= ?3 A, I
B1
= ? 0.1 A, I
B2
= 0.1 A 0.1 ?s
Storage time t
stg
V
CC
= ?20 V 0.5 ?s
Fall time t
f
0.1 ?s
Note) The part numbers in the parenthesis show conventional part number.
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank R Q P
h
FE2
60 to 120 90 to 180 130 to 260
相关器件：2SB948 2SB948A 2SB0948A
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