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器件描述：For Power Amplification
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：75.79KB
文件页数：3
PDF阅读：2SB930A.pdf (点击阅读器件资料)
摘要：
Power Transistors
1
Publication date: April 2003 SJD00012BED
2SB0930 (2SB930), 2SB0930A (2SB930A)
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1253, 2SD1253A
■ Features
? High forward current transfer ratio h
FE
which has satisfactory linearity
? Low collector-emitter saturation voltage V
CE(sat)
? N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Parameter Symbol Rating Unit
Collector-base voltage
2SB0930 V
CBO
?60 V
(Emitter open)
2SB0930A ?80
Collector-emitter voltage
2SB0930 V
CEO
?60 V
(Base open)
2SB0930A ?80
Emitter-base voltage (Collector open) V
EBO
?5V
Collector current I
C
?4A
Peak collector current I
CP
?8A
Collector power dissipation P
C
40 W
T
a
= 25°C 1.3
Junction temperature T
j
150 °C
Storage temperature T
stg
?55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB0930 V
CEO
I
C
= ?30 mA, I
B
= 0 ?60 V
(Base open)
2SB0930A ?80
Collector-emitter cutoff
2SB0930 I
CES
V
CE
= ?60 V, V
BE
= 0 ?400 ?A
current (E-B short)
2SB0930A V
CE
= ?80 V, V
BE
= 0 ?400
Collector-emitter cutoff
2SB0930 I
CEO
V
CE
= ?30 V, I
B
= 0 ?700 ?A
current (Base open)
2SB0930A V
CE
= ?60 V, I
B
= 0 ?700
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= ?5 V, I
C
= 0 ?1mA
Forward current transfer ratio h
FE1
*
V
CE
= ?4 V, I
C
= ?1 A 70 250 ?
h
FE2
V
CE
= ?4 V, I
C
= ?3 A 15
Base-emitter voltage V
BE
V
CE
= ?4 V, I
C
= ?3 A ?2.0 V
Collector-emitter saturation voltage V
CE(sat)
I
C
= ?4 A, I
B
= ?0.4 A ?1.5 V
Transition frequency f
T
V
CE
= ?10 V, I
C
= ? 0.5 A, f = 10 MHz 20 MHz
Turn-on time t
on
I
C
= ?4 A, 0.2 ?s
Storage time t
stg
I
B1
= ? 0.4 A, I
B2
= 0.4 A 0.5 ?s
Fall time t
f
V
CC
= ?50 V 0.2 ?s
8.5±0.2 3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0) 1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±0
.5
14.4
±
0.5
Rank Q P
h
FE1
70 to 150 120 to 250
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Note) The part number in the parenthesis shows conventional part number.
相关器件：2SB930 2SB0930A 2SB0930
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