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器件描述：For Low-Frequency Output Amplification
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：81.75KB
文件页数：4
PDF阅读：2SB0819.pdf (点击阅读器件资料)
摘要：
Transistors
1
Publication date: November 2002 SJC00059BED
2SB0819 (2SB819)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1051
■ Features
? High collector-emitter voltage (Base open) V
CEO
? Large collctor power dissipation P
C
? M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) The part number in the parenthesis shows conventional part number.
Rank Q R
h
FE
80 to 160 120 to 220
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
6.9±0.1
2.5±0.1
(1.0)
(1.0)
(1.5)
(0.85) 0.45±0.05
0.55±0.1
(2.5)(2.5)
213
R 0.7
R 0.9
(0.4)
3.5
±
0.1
4.5
±
0.1
4.1
±
0.2
2.4
±
0.2
1.25
±
0.05
2.0
±
0.2
1.0
±
0.1
(1.5)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
?50 V
Collector-emitter voltage (Base open) V
CEO
?40 V
Emitter-base voltage (Collector open) V
EBO
?5V
Collector current I
C
?1.5 A
Peak collector current I
CP
?3A
Collector power dissipation
*
P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
?55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= ?1 mA, I
E
= 0 ?50 V
Collector-emitter voltage (Base open) V
CEO
I
C
= ?2 mA, I
B
= 0 ?40 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= ?20 V, I
E
= 0 ?1 ?A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= ?10 V, I
B
= 0 ?100 ?A
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= ?5 V, I
C
= 0 ?10 ?A
Forward current transfer ratio
*
1, 2
h
FE
V
CE
= ?5 V, I
C
= ?1 A 80 220 ?
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= ?1.5 A, I
B
= ? 0.15 A ?1V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= ?2 A, I
B
= ? 0.2 A ?1.5 V
Transition frequency f
T
V
CB
= ?5 V, I
E
= 0.5 A, f = 200 MHz 150 MHz
Collector output capacitance C
ob
V
CB
= ?20 V, I
E
= 0, f = 1 MHz 45 pF
(Common base, input open circuited)
Note)
*
: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion
相关器件：2SB819
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