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器件描述：For Power Amplification
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：74.79KB
文件页数：3
PDF阅读：2SB928.pdf (点击阅读器件资料)
摘要：
Power Transistors
1
Publication date: February 2003 SJD00010BED
2SB0928 (2SB928), 2SB0928A (2SB928A)
Silicon PNP epitaxial planar type
For Power amplification
For TV vertical deflection output
Complementary to 2SD1250 and 2SD1250A
■ Features
? High collector-emitter voltage (Base open) V
CEO
? High collector power dissipation P
C
? N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T
C
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
?200 V
Collector-emitter voltage 2SB0928 V
CEO
?150 V
(Base open) 2SB0928A ?180
Emitter-base voltage (Collector open) V
EBO
?6V
Collector current I
C
?2A
Peak collector current I
CP
?3A
Collector power
P
C
30 W
dissipation
T
a
= 25°C 1.3
Junction temperature T
j
150 °C
Storage temperature T
stg
?55 ? +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= ?500 ?A, I
E
= 0 ?200 V
Collector-emitter voltage 2SB0928 V
CEO
I
C
= ?5 mA, I
B
= 0 ?150 V
(Base open) 2SB0928A ?180
Emitter-base voltage (Collector open) V
EBO
I
E
= ?500 ?A, I
C
= 0 ?6V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= ?200 V, I
E
= 0 ?50 ?A
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= ?4 V, I
C
= 0 ?50 ?A
Forward current transfer ratio h
FE1
*
V
CE
= ?10 V, I
C
= ?150 mA 60 240 ?
h
FE2
V
CE
= ?10 V, I
C
= ?400 mA 50
Base-emitter voltage V
BE
V
CE
= ?10 V, I
C
= ?400 mA ?1.0 V
Collector-emitter saturation voltage V
CE(sat)
I
C
= ?500 mA, I
B
= ?50 mA ?1.0 V
Transition frequency f
T
V
CE
= ?10 V, I
C
= ? 0.5 A, f = 10 MHz 40 MHz
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit : mm
Rank Q P
h
FE1
60 to 140 100 to 240
Note) The part numbers in the parenthesis show conventional part number.
8.5±0.2 3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0) 1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±0
.5
14.4
±
0.5
Note) Self-supported type package is also prepared
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
相关器件：2SB928A 2SB0928A 2SB0928
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