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器件描述：Silicon PNP epitaxial planer type(For low-frequency power amplification and driver amplification)
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：47.22KB
文件页数：3
PDF阅读：2SA719.pdf (点击阅读器件资料)
摘要：
1
Transistor
2SA719, 2SA720
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1317 and 2SC1318
n
Features
l Complementary pair with 2SC1317 and 2SC1318.
n
Absolute Maximum Ratings (Ta=25?C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0– 0.2 4.0– 0.2
5.1
–
0.2
13.5
–
0.5
0.45
+0.2
–0.10.45
+0.2
–0.1
1.27 1.27
2.3
–
0.2
2.54– 0.15
213
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–30
–60
–25
–50
–5
–1
–500
625
150
–55 ~ +150
Unit
V
V
V
A
mA
mW
?C
?C
2SA719
2SA720
2SA719
2SA720
n
Electrical Characteristics (Ta=25?C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10m A, I
E
= 0
I
C
= –10mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –10V, I
C
= –500mA
I
C
= –300mA, I
B
= –30mA
I
C
= –300mA, I
B
= –30mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–30
–60
–25
–50
–5
85
40
typ
– 0.35
–1.1
200
6
max
– 0.1
340
– 0.6
–1.5
15
Unit
m A
V
V
V
V
V
MHz
pF
2SA719
2SA720
2SA719
2SA720
*
h
FE1
Rank classification
Rank Q R S
h
FE1
85 ~ 170 120 ~ 240 170 ~ 340
相关器件：2SA720
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