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器件描述：Silicon PNP epitaxial planer type
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：47.42KB
文件页数：3
PDF阅读：2SA1533.pdf (点击阅读器件资料)
摘要：
1
Transistor
2SA1533
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC3939
n
Features
l High collector to emitter voltage V
CEO
.
l Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
n
Absolute Maximum Ratings (Ta=25?C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–80
–80
–5
–1
– 0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
?C
?C
n
Electrical Characteristics (Ta=25?C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
Cob
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10m A, I
E
= 0
I
C
= –100m A, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –5V, I
C
= –500mA
I
C
= –300mA, I
B
= –30mA
I
C
= –300mA, I
B
= –30mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–80
–80
–5
90
50
typ
100
– 0.2
– 0.85
85
11
max
– 0.1
220
– 0.4
–1.2
20
Unit
m A
V
V
V
V
V
MHz
pF
Unit: mm
1:Emitter
2:Collector
3:Base
TO–92NL Package
5.0– 0.2
13.5
–
0.5
0.7
–
0.2
8.0
–
0.2
1.27
123
1.27
4.0– 0.2
0.45
+0.15
–0.10.45
+0.15
–0.1
2.3
–
0.2
0.7– 0.1
2.54– 0.15
*
h
FE1
Rank classification
Rank Q R
h
FE1
90 ~ 155 130 ~ 220
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