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器件描述：Silicon PNP epitaxial planer type
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：37.84KB
文件页数：2
PDF阅读：2SA1532.pdf (点击阅读器件资料)
摘要：
1
Transistor
2SA1532
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC3930
n
Features
l High transition frequency f
T
.
l S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
n
Absolute Maximum Ratings (Ta=25?C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
–30
–20
–5
–30
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
?C
?C
n
Electrical Characteristics (Ta=25?C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector to emitter saturation voltage
Base to emitter voltage
Noise figure
Reverse transfer impedance
Common emitter reverse transfer
capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
*
f
T
V
CE(sat)
V
BE
NF
Z
rb
C
re
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –20V, I
B
= 0
V
EB
= –5V, I
C
= 0
V
CE
= –10V, I
C
= –1mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
I
C
= –10mA, I
B
= –1mA
V
CE
= –10V, I
C
= –1mA
V
CB
= –10V, I
E
= 1mA, f = 5MHz
V
CB
= –10V, I
E
= 1mA, f = 2MHz
V
CE
= –10V, I
C
= –1mA
f = 10.7MHz
min
70
150
typ
300
– 0.1
– 0.7
2.8
22
1.2
max
– 0.1
–100
–10
220
4.0
60
2.0
Unit
m A
m A
MHz
V
V
dB
W
pF
*
h
FE
Rank classification
Rank B C
h
FE
70 ~ 140 110 ~ 220
Marking Symbol EB EC
Marking symbol : E
Unit: mm
1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package
2.1– 0.1
1.3
–
0.1
0.9
–
0.1
0.7
–
0.1
0.3
+0.1 –0
0.15
+0.1 –0.05
2.0
–
0.2
1.25– 0.1 0.4250.425
1
3
2
0.65
0.2
0
.65
0 to 0.1
0.2– 0.1
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