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器件描述：Silicon NPN epitaxial planer type(For high-frequency amplification)
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：45.67KB
文件页数：3
PDF阅读：2SA1323.pdf (点击阅读器件资料)
摘要：
1
Transistor
2SC3314
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1323
n
Features
l Optimum for high-density mounting.
l Allowing supply with the radial taping.
l Optimum for RF amplification of FM/AM radios.
l High transition frequency f
T
.
n
Absolute Maximum Ratings (Ta=25?C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
4.0– 0.2
marking
2.54– 0.15
1.271.27
3.0
–
0.2
15.6
–
0.5
2.0
–
0.2
0.7
–
0.1
0.45
–
0.1
123
+0.2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
300
150
–55 ~ +150
Unit
V
V
V
mA
mW
?C
?C
n
Electrical Characteristics (Ta=25?C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Common emitter reverse transfer capacitance
Reverse transfer impedance
Symbol
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
V
BE
f
T
NF
C
re
Z
rb
Conditions
I
C
= 10m A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 10V, I
C
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= –1mA, f = 200MHz
V
CB
= 10V, I
E
= –1mA, f = 5MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= –1mA, f = 2MHz
min
30
20
5
70
150
typ
0.1
0.7
300
2.8
max
220
4.0
1.5
50
Unit
V
V
V
V
V
MHz
dB
pF
W
*
h
FE
Rank classification
Rank B C
h
FE
70 ~ 140 110 ~ 220
相关器件：2SC3314
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