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器件描述：Silicon NPN epitaxial planer type(For high-frequency amplification)
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：51.9KB
文件页数：3
PDF阅读：2SA1022.pdf (点击阅读器件资料)
摘要：
1
Transistor
2SC2295
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1022
n
Features
l Optimum for RF amplification of FM/AM radios.
l High transition frequency f
T
.
l Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
n
Absolute Maximum Ratings (Ta=25?C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65– 0.15 0.65– 0.15
3
1
2
0.95
0.95
1.9
–
0.2
0.4
+0.1 –0.05
1.1
+0.2 –0.1
0.8
0.4– 0.2
0 to 0.1
0.16
+0.1 –0.06
1.45
0.1 to 0.3
2.9
+0.2 –0.05
Symbol
V
CBO
V
CEO
C
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
?C
?C
n
Electrical Characteristics (Ta=25?C)
Parameter
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
Symbol
I
CBO
h
FE
*
f
T
NF
Z
rb
C
re
Conditions
V
CB
= 10V, I
E
= 0
V
CB
= 10V, I
E
= –1mA
V
CB
= 10V, I
E
= –1mA, f = 200MHz
V
CB
= 10V, I
E
= –1mA, f = 5MHz
V
CB
= 10V, I
E
= –1mA, f = 2MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
min
70
150
typ
250
2.8
22
0.9
max
0.1
220
4
50
1.5
Unit
m A
MHz
dB
W
pF
Marking symbol : V
*
h
FE
Rank classification
Rank B C
h
FE
70 ~ 140 110 ~ 220
Marking Symbol VB VC
相关器件：2SC2295
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