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器件描述：Silicon NPN triple diffusion planer type
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：47.5KB
文件页数：3
PDF阅读：2SA1018.pdf (点击阅读器件资料)
摘要：
1
Transistor
2SC1473, 2SC1473A
Silicon NPN triple diffusion planer type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
n
Features
l High collector to emitter voltage V
CEO
.
l High transition frequency f
T
.
n
Absolute Maximum Ratings (Ta=25?C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0– 0.2 4.0– 0.2
5.1
–
0.2
13.5
–
0.5
0.45
+0.2
–0.10.45
+0.2
–0.1
1.27 1.27
2.3
–
0.2
2.54– 0.15
213
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
250
300
200
300
7
100
70
750
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
?C
?C
2SC1473
2SC1473A
2SC1473
2SC1473A
n
Electrical Characteristics (Ta=25?C)
Parameter
Collector cutoff
current
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CEO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CE
= 120V, I
B
= 0
V
CE
= 120V, I
B
= 0
I
C
= 100m A, I
C
= 0
I
E
= 1m A, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
200
300
7
30
50
typ
80
max
1
1
220
1.2
10
Unit
m A
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank P Q R
h
FE
30 ~ 100 60 ~ 150 100 ~ 220
2SC1473
2SC1473A
2SC1473
2SC1473A
相关器件：2SC1473A 2SC1473 2SA1767
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