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器件描述：Insulated Gate Bipolar Transistor
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：33.76KB
文件页数：2
PDF阅读：2PG402.pdf (点击阅读器件资料)
摘要：
1
IGBTs
unit: mm
2PG402
Insulated Gate Bipolar Transistor
n Features
l High breakdown voltage: V
CES
= 400V
l Allowing to control large current: I
C(peak)
= 130A
l Housed in the surface mounting package
n Applications
l For flash-light for use in a camera
1: Emitter
2: Collector
3: Gate
U Type Package
n Absolute Maximum Ratings (T
C
= 25°C)
Parameter
Collector to emitter voltage
Gate to emitter voltage
Collector current
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
ch
T
stg
Ratings
400
±8
5
130
10
1
150
- 55 to +150
Unit
V
V
A
A
W
°C
°C
n Electrical Characteristics (T
C
= 25°C)
Parameter
Collector to emitter cut-off current
Gate to emitter leakage current
Collector to emitter breakdown voltage
Gate threshold voltage
Collector to emitter
saturation voltage
Input capacitance (Common Emitter)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
I
CES
I
GES
V
CES
V
GE(th)
V
CE(sat)
C
ies
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
CE
= 320V, V
GE
= 0
V
GE
= ±8V, V
CE
= 0
I
C
= 1mA, V
GE
= 0
V
CE
= 10V, I
C
= 1mA
V
GE
= 5V, I
C
= 5A
V
GE
= 5V, I
C
= 130A
V
CE
= 10V, V
GE
= 0, f = 1MHz
V
CC
= 300V, I
C
= 130A
V
GE
= 5V, R
g
= 25W
min
400
0.5
typ
1930
130
1.4
350
1.5
max
10
±1
1.5
2
10
Unit
m A
m A
V
V
V
pF
ns
m s
ns
m s
6.5– 0.1
5.3– 0.1
4.35– 0.1
3.0– 0.1
0.85– 0.1
1
4.6– 0.1
0.75– 0.1 0.5– 0.1
9.8
–
0.1
1.0
–
0.2
7.3
–
0.1
5.5
–
0.1
0.2max.
2.3
–
0.1
2.5
–
0.1
2.3
–
0.1
Marking
2.5
–
0.1
0.05 to 0.15
1.0– 0.1
23
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