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2PG401
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：Insulated Gate Bipolar Transistor 器件厂商：PANASONIC [Panasonic Semiconductor] 厂商主页：http://www.panasonic.co.jp/semicon/e-index.html 文件大小：22.05KB 文件页数：1 PDF阅读：2PG401.pdf (点击阅读器件资料) 摘要： 1 IGBTs unit: mm 2PG401 Insulated Gate Bipolar Transistor n Features l High breakdown voltage: V CES = 400V l Allowing to control large current: I C(peak) = 130A l Allowing to provide with the surface mounting package n Applications l For flash-light for use in a camera 1: Gate 2: Collector 3: Emitter I Type Package n Absolute Maximum Ratings (T C = 25°C) Parameter Collector to emitter voltage Gate to emitter voltage Collector current Allowable power dissipation Channel temperature Storage temperature DC Pulse T C = 25°C Ta = 25°C Symbol V CES V GES I C I CP P C T ch T stg Ratings 400 ±8 5 130 15 1.3 150 - 55 to +150 Unit V V A A W °C °C n Electrical Characteristics (T C = 25°C) Parameter Collector to emitter cut-off current Gate to emitter leakage current Collector to emitter breakdown voltage Gate threshold voltage Collector to emitter saturation voltage Input capacitance (Common Emitter) Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time Symbol I CES I GES V CES V GE(th) V CE(sat) C ies t d(on) t r t d(off) t f Conditions V CE = 320V, V GE = 0 V GE = ±8V, V CE = 0 I C = 1mA, V GE = 0 V CE = 10V, I C = 1mA V GE = 5V, I C = 5A V GE = 5V, I C = 130A V CE = 10V, V GE = 0, f = 1MHz V CC = 300V, I C = 130A V GE = 5V, R g = 25W min 400 0.5 typ 1930 130 1.4 350 1.5 max 10 ±1 1.5 2 10 Unit m A m A V V V pF ns m s ns m s 7.2±0.3 7.0±0.3 3.0±0.2 3.5±0.2 10.0 +0.3 –0. 0.8±0.2 1.0±0.2 4.6±0.4 213 1.1±0.1 0.75±0.1 2.3±0.2 0.85±0.1 0.4±0.1 相关器件：

2PG401

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：Insulated Gate Bipolar Transistor
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：22.05KB
文件页数：1
PDF阅读：2PG401.pdf (点击阅读器件资料)

摘要：
1
IGBTs
unit: mm
2PG401
Insulated Gate Bipolar Transistor
n Features
l High breakdown voltage: V
CES
= 400V
l Allowing to control large current: I
C(peak)
= 130A
l Allowing to provide with the surface mounting package
n Applications
l For flash-light for use in a camera
1: Gate
2: Collector
3: Emitter
I Type Package
n Absolute Maximum Ratings (T
C
= 25°C)
Parameter
Collector to emitter voltage
Gate to emitter voltage
Collector current
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
ch
T
stg
Ratings
400
±8
5
130
15
1.3
150
- 55 to +150
Unit
V
V
A
A
W
°C
°C
n Electrical Characteristics (T
C
= 25°C)
Parameter
Collector to emitter cut-off current
Gate to emitter leakage current
Collector to emitter breakdown voltage
Gate threshold voltage
Collector to emitter
saturation voltage
Input capacitance (Common Emitter)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
I
CES
I
GES
V
CES
V
GE(th)
V
CE(sat)
C
ies
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
CE
= 320V, V
GE
= 0
V
GE
= ±8V, V
CE
= 0
I
C
= 1mA, V
GE
= 0
V
CE
= 10V, I
C
= 1mA
V
GE
= 5V, I
C
= 5A
V
GE
= 5V, I
C
= 130A
V
CE
= 10V, V
GE
= 0, f = 1MHz
V
CC
= 300V, I
C
= 130A
V
GE
= 5V, R
g
= 25W
min
400
0.5
typ
1930
130
1.4
350
1.5
max
10
±1
1.5
2
10
Unit
m A
m A
V
V
V
pF
ns
m s
ns
m s
7.2±0.3
7.0±0.3
3.0±0.2
3.5±0.2
10.0
+0.3 –0.
0.8±0.2
1.0±0.2
4.6±0.4
213
1.1±0.1
0.75±0.1
2.3±0.2
0.85±0.1
0.4±0.1

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