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器件描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
器件厂商:STMICROELECTRONICS [STMicroelectronics]
厂商主页:http://www.st.com/
文件大小:178.97KB
文件页数:20
PDF阅读:29W040.pdf (点击阅读器件资料)
摘要:
1/20April 2002 M29W040B 4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory a73 SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS a73 ACCESS TIME: 55ns a73 PROGRAMMING TIME – 10?s per Byte typical a73 8 UNIFORM 64 Kbytes MEMORY BLOCKS a73 PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits a73 ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend a73 UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming a73 LOW POWER CONSUMPTION – Standby and Automatic Standby a73 100,000 PROGRAM/ERASE CYCLES per BLOCK a73 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year a73 ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: E3h TSOP32 (N) 8 x 20mm PLCC32 (K) TSOP32 (NZ) 8 x 14mm Figure 1. Logic Diagram AI02953 19 A0-A18 W DQ0-DQ7 V CC M29W040B G E V SS 8
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