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1N6263
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：SMALL SIGNAL SCHOTTKY DIODE 器件厂商：STMICROELECTRONICS [STMicroelectronics] 厂商主页：http://www.st.com/ 文件大小：49.74KB 文件页数：3 PDF阅读：1N6263.pdf (点击阅读器件资料) 摘要： ? 1N 6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break- down, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. August 1999 Ed: 1A Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 60 V IF Forward Continuous Current* T a = 25 °C 15 mA IFSM Surge non Repetitive Forward Current* t p ≤ 1s 50 mA T stg Tj Storage and Junction Temperature Range - 65 to 200 - 65 to 200 °C T L Maximum Lead Temperature for Soldering during 10s at 4mm from Case 230 °C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit Rth(j-a) Junction-ambient* 400 °C/W THERMAL RESISTANCE * On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300?s δ < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. Symbol Test Conditions Min. Typ. Max. Unit V BR Tamb = 25°CIR = 10?A 60 V V F * * T amb = 25°CI F = 1mA 0.41 V T amb = 25°CI F = 15mA 1 I R * * T amb = 25°CVR = 50V 0.2 ?A STATIC CHARACTERISTICS ELECTRICAL CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit C T amb = 25°CV R = 0V f = 1MHz 2.2 pF τ T amb = 25°CI F = 5mA Krakauer Method 100 ps DYNAMIC CHARACTERISTICS DO 35 (Glass) 1/3 相关器件：

1N6263

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：SMALL SIGNAL SCHOTTKY DIODE
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：49.74KB
文件页数：3
PDF阅读：1N6263.pdf (点击阅读器件资料)

摘要：
?
1N 6263
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection
and pulse application with broad dynamic range.
August 1999 Ed: 1A
Symbol Parameter Value Unit
VRRM Repetitive Peak Reverse Voltage 60 V
IF Forward Continuous Current* T
a
= 25

°C 15 mA
IFSM Surge non Repetitive Forward Current* t
p
≤ 1s 50 mA
T
stg
Tj
Storage and Junction Temperature Range - 65 to 200
- 65 to 200
°C
T
L Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230 °C
ABSOLUTE RATINGS (limiting values)
Symbol Test Conditions Value Unit
Rth(j-a) Junction-ambient* 400 °C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
** Pulse test: tp ≤ 300?s δ < 2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
Symbol Test Conditions Min. Typ. Max. Unit
V
BR Tamb = 25°CIR = 10?A 60 V
V
F
* * T
amb
= 25°CI
F
= 1mA 0.41 V
T
amb
= 25°CI
F
= 15mA 1
I
R
* * T
amb = 25°CVR = 50V
0.2 ?A
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C T
amb
= 25°CV
R
= 0V f = 1MHz 2.2 pF
τ T
amb
= 25°CI
F
= 5mA Krakauer Method 100 ps
DYNAMIC CHARACTERISTICS
DO 35
(Glass)
1/3

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