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器件描述：Silicon NPN epitaxial planer type(For low-frequency driver amplification)
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：45.77KB
文件页数：3
PDF阅读：1318.pdf (点击阅读器件资料)
摘要：
1
Transistor
2SC1318A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA720A
n
Features
l High collector to emitter voltage V
CEO
.
l Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
n
Absolute Maximum Ratings (Ta=25?C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0– 0.2 4.0– 0.2
5.1
–
0.2
13.5
–
0.5
0.45
+0.2
–0.10.45
+0.2
–0.1
1.27 1.27
2.3
–
0.2
2.54– 0.15
213
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
80
70
5
1
0.5
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
?C
?C
n
Electrical Characteristics (Ta=25?C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10m A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
80
70
5
85
40
typ
160
100
0.2
0.85
120
11
max
0.1
340
0.6
1.5
20
Unit
m A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank Q R S
h
FE1
85 ~ 170 120 ~ 240 170 ~ 340
*2
Pulse measurement
相关器件：2SC1318A 2SA720A
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