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器件描述：PNP DARLINGTON POWER SILICON TRANSISTOR
器件厂商：MICREL [Micrel Semiconductor]
厂商主页：http://www.micrel.com/
文件大小：57.51KB
文件页数：2
PDF阅读：JAN2N6052.pdf (点击阅读器件资料)
摘要：
TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/501
Devices Qualified Level
2N6051 2N6052
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N6051 2N6052 Unit
Collector - Emitter Voltage V CEO 80 100 Vdc
Col lector - Base Voltage V CBO 80 100 Vdc
Emitter - Base Voltage V EBO 5.0 Vdc
Base Current I B 0.2 Adc
Collector Current I C 12 Adc
Total Power Dissipation (1) @ T C = +25 0 C
@ T C = +100 0 C P T
150
75
W
W
Operating & Storage Junction Temperature Range T op , T stg - 55 to +175 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 1.0 0 C/W
1) Derate linearly at 1.0 W/ 0 C above T C > +25 0 C
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 100 mAdc 2N6051
2N6052
V (BR) CEO
80
100
Vdc
Collector - Emitter Cutoff Current
V CE = 40 Vdc 2N6051
V CE = 50 Vdc 2N6052
I CEO
1.0
1.0
mAdc
Collector - Emitter Cutoff Current
V CE = 80 Vdc, V BE = 1.5 Vdc 2N6051
V CE = 100 Vdc, V BE = 1.5 Vdc 2N6052
I CEX
0.5
0.5
mAdc
Emitter - Base Cutoff Current
V EB = 5.0 Vdc
I EBO
2.0
mAdc
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Page 1 of 2
TO - 3*
(TO - 204AA)
相关器件：JANTX2N6052 JANTXV2N6051 JANTXV2N6052 2N6052 JANTX2N6051 JAN2N6051 2N6051
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