• 密码:
  • 免费NewsLetter申请
  • 设为首页
  • 汽车电子
  • 手机/便携
  • 数字电视
  • 网络通信
  • 工业控制
  • 测试测量
  • 计算机
  • 安防电子
  • 医疗电子
  • 论坛
  • 博客
  • 资源中心

3,000,000器件资料库等你来搜

元器件厂商按字母排序

2SB1462L
EEWorld咨询电话:82357002,82350740-8068 邮件咨询:datasheet@eeworld.com.cn
器件描述:For General Amplification
器件厂商:PANASONIC [Panasonic Semiconductor]
厂商主页:http://www.panasonic.co.jp/semicon/e-index.html
文件大小:39.91KB
文件页数:2
PDF阅读:2SB1462L.pdf  (点击阅读器件资料)

摘要:
Transistors
1
Publication date: April 2003 SJC00088BED
2SB1462L
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2216L
■ Features
? High forward current transfer ratio h
FE
? Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
?60 V
Collector-emitter voltage (Base open) V
CEO
?50 V
Emitter-base voltage (Collector open) V
EBO
?7V
Collector current I
C
?100 mA
Peak collector current I
CP
?200 mA
Collector power dissipation
*
P
C
150 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
?55 to +125 °C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note)
*
: Print circuit board: Copper foil area of 20.0 mm
2
or more, and the
board thickness of 1.6 mm for the collector portion
Marking Symbol: J
0.80
±
0.05
0.05
±
0.03
0.20
±
0.03
0.50
1.00±0.05 0.60±0.05
0.60 0.05±0.03
0.30±0.03
0.020±0.010
1
2
4
3
2
1
3
4
Unit: mm
1: Base
2: Emitter
3: Collector
4: Collector
ML4-N1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emiter open) V
CBO
I
C
= ?10 ?A, I
E
= 0 ?60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= ?100 ?A, I
B
= 0 ?50 V
Emiter-base voltage (Collector open) V
EBO
I
E
= ?10 ?A, I
C
= 0 ?7V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= ?20 V, I
E
= 0 ? 0.1 ?A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= ?10 V, I
B
= 0 ?100 ?A
Forward current transfer ratio h
FE
V
CE
= ?10 V, I
C
= ?2mA 180 390 ?
Collector-emitter saturation voltage V
CE(sat)
I
C
= ?100 mA, I
B
= ?10 mA ? 0.3 ? 0.5 V
Transition frequency f
T
V
CB
= ?10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance C
ob
V
CB
= ?10 V, I
E
= 0, f = 1 MHz 2.7 pF
(Common base, input open circuited)

相关器件:

元器件厂商按字母排序


关于我们 - 广告合作 - 联系方式 - 给我们建议 - 器件索引

北京市海淀区知春路23号集成电路设计园量子银座506 电话:(010)82350740

电子工程世界 版权所有 京ICP证 060456

Copyright ? 2005-2007 EEWorld.com.cn, Inc. All rights reserved