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器件描述：Silicon PNP epitaxial planer type(For low-frequency amplification)
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：35.78KB
文件页数：2
PDF阅读：2SB0774.pdf (点击阅读器件资料)
摘要：
1
Transistor
2SB774
Silicon PNP epitaxial planer type
For low-frequency amplification
n
Features
l High emitter to base voltage V
EBO
.
l Protective diodes and resistances between emitter and base can
be omitted.
n
Absolute Maximum Ratings (Ta=25?C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0– 0.2 4.0– 0.2
5.1
–
0.2
13.5
–
0.5
0.45
+0.2
–0.10.45
+0.2
–0.1
1.27 1.27
2.3
–
0.2
2.54– 0.15
213
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–30
–25
–15
–200
–100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
?C
?C
n
Electrical Characteristics (Ta=25?C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –20V, I
B
= 0
I
C
= –10m A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –10V, I
C
= –2mA
V
CE
= –2V, I
C
= –100mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 2mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–30
–25
–15
210
90
typ
150
4
max
–1
–100
460
–0.5
Unit
m A
m A
V
V
V
V
MHz
pF
*
h
FE1
Rank classification
Rank R S
h
FE1
210 ~ 340 290 ~ 460
相关器件：2SB774
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