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器件描述：Silicon PNP epitaxial planar type
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：48.33KB
文件页数：2
PDF阅读：2SA2102.pdf (点击阅读器件资料)
摘要：
Power Transistors
1
Publication date: November 2002 SJD00296AED
2SA2102
Silicon PNP epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
? High-speed switching (t
stg
: storage time/t
f
: fall time is short)
? Low collector-emitter saturation voltage V
CE(sat)
? Superior forward current transfer ratio h
FE
linearity
? TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
123
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder Dip
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= ?10 mA, I
B
= 0 ?60 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= ?60 V, I
E
= 0 ?100 ?A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= ?60 V, I
B
= 0 ?100 ?A
Forward current transfer ratio h
FE1
V
CE
= ?4 V, I
C
= ? 0.2 A 60 ?
h
FE2
V
CE
= ?4 V, I
C
= ?1 A 80 250 ?
h
FE3
V
CE
= ?4 V, I
C
= ?3 A 30 ?
Collector-emitter saturation voltage V
CE(sat)
I
C
= ?3 A, I
B
= ? 0.375 A ? 0.8 V
Transition frequency f
T
V
CE
= 10 V, I
C
= ? 0.1 A, f = 10 MHz 100 MHz
Turn-on time t
on
I
C
= ?1 A, Resistance loaded 0.2 ?s
Storage time t
stg
I
B1
= ? 0.1 A, I
B2
= 0.1 A 0.4 ?s
Fall time t
f
V
CC
= ?50 V 0.1 ?s
Internal Connection
B
C
E
Marking Symbol: A2102
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
?60 V
Collector-emitter voltage (Base open) V
CEO
?60 V
Emitter-base voltage (Collector open) V
EBO
?6V
Collector current I
C
?3A
Peak collector current I
CP
?5A
Collector power
T
C
= 25°CP
C
15 W
dissipation
T
a
= 25°C2
Junction temperature T
j
150 °C
Storage temperature T
stg
?55 to +150 °C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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