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器件描述:For audio system/pli drive
器件厂商:PANASONIC [Panasonic Semiconductor]
厂商主页:http://www.panasonic.co.jp/semicon/e-index.html
文件大小:69.22KB
文件页数:3
PDF阅读:2SA0914.pdf (点击阅读器件资料)
摘要:
Power Transistors 1 Publication date: December 2003 SJD00005CED ■ Electrical Characteristics T a = 25°C ± 3°C Unit: mm 1: Emitter 2: Collector 3: Base TO-126B-A1 Package Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V CEO I C = ?100 ?A, I B = 0 ?150 V Emitter-base voltage (Collector open) V EBO I E = ?10 ?A, I C = 0 ?5V Collector-base cutoff current (Emitter open) I CBO V CB = ?100 V, I E = 0 ?1 ?A Forward current transfer ratio * h FE V CE = ?5 V, I C = ?10 mA 130 330 ? Collector-emitter saturation voltage V CE(sat) I C = ?30 mA, I B = ?3 mA ?1V Transition frequency f T V CB = ?10 V, I E = 10 mA, f = 200 MHz 70 MHz Collector output capacitance C ob V CB = ?6 V, I E = 0, f = 1 MHz 5 pF (Common base, input open circuited) Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO ?150 V Collector-emitter voltage (Base open) V CEO ?150 V Emitter-base voltage (Collector open) V EBO ?5V Collector current I C ?50 mA Peak collector current I CP ?100 mA Collector power dissipation P C 1.2 W Junction temperature T j 150 °C Storage temperature T stg ?55 to +150 °C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. * : Rank classification Note) The part number in the parenthesis shows conventional part number. Rank R S h FE 130 to 220 185 to 330 8.0 +0.5 –0.1 1.9 ± 0.1 3.05 ± 0.1 3.8 ± 0.3 11.0 ± 0.5 16.0 ± 1.0 3.2±0.2 0.75±0.1 0.5±0.1 2.3±0.2 4.6±0.2 0.5±0.1 1.76±0.1 123 φ 3.16±0.1 2SA0914 (2SA914) Silicon PNP epitaxial planar type For audio system/pli drive Complementary to 2SC1953 ■ Features ? A complementary pair with 2SC1953, is optimum for the pre- driver stage of a 60 W to 100 W output amplifier ? TO-126B package which requires no insulation plate for instal- lation to the heat sink ■ Absolute Maximum Ratings T C = 25°C
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