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2SA0900
EEWorld咨询电话:82357002,82350740-8068 邮件咨询:datasheet@eeworld.com.cn
器件描述:For low-frequency Power amplification Complementary
器件厂商:PANASONIC [Panasonic Semiconductor]
厂商主页:http://www.panasonic.co.jp/semicon/e-index.html
文件大小:71.7KB
文件页数:3
PDF阅读:2SA0900.pdf  (点击阅读器件资料)

摘要:
Power Transistors
1
Publication date: April 2003 SJD00004BED
2SA0900 (2SA900)
Silicon PNP epitaxial planar type
For low-frequency Power amplification
Complementary to 2SC1868
■ Features
? Low collector-emitter saturation voltage V
CE(sat)
? TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= ?10 ?A, I
E
= 0 ?20 V
Collector-emitter voltage (Base open) V
CEO
I
C
= ?1 mA, I
B
= 0 ?18 V
Emitter-base voltage (Collector open) V
EBO
I
E
= ?10 ?A, I
C
= 0 ?5V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= ?10 V, I
E
= 0 ?1 ?A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= ?18 V, I
B
= 0 ?10 ?A
Forward current transfer ratio h
FE1

*
V
CE
= ?2 V, I
C
= ?500 mA 130 280 ?
h
FE2
V
CE
= ?2 V, I
C
= ?1.5 A 50
Collector-emitter saturation voltage V
CE(sat)
I
C
= ?1 A, I
B
= ?50 mA ? 0.5 V
Base-emitter saturation voltage V
BE(sat)
I
C
= ?500 mA, I
B
= ?50 mA ?1.2 V
Transition frequency f
T
V
CB
= ?6 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= ?6 V, I
E
= 0, f = 1 MHz 40 pF
(Common base, input open circuited)
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
?20 V
Collector-emitter voltage (Base open) V
CEO
?18 V
Emitter-base voltage (Collector open) V
EBO
?5V
Collector current I
C
?1A
Peak collector current I
CP
?2A
Collector power dissipation
P
C
1.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
?55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Note) The part numbers in the parenthesis show conventional part number.
Rank R S
h
FE1
130 to 210 180 to 280
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1

相关器件:2SA900

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