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2SA1487
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：SILICON PNP EPITAXIAL PLANER TYPE 器件厂商：PANASONIC [Panasonic Semiconductor] 厂商主页：http://www.panasonic.co.jp/semicon/e-index.html 文件大小：45.61KB 文件页数：3 PDF阅读：2SA1487.pdf (点击阅读器件资料) 摘要： 1 Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier n Features l High transition frequency f T . l Small collector output capacitance C ob . n Absolute Maximum Ratings (Ta=25?C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO I CP I C P C T j T stg Ratings –85 –85 –4 –100 –50 1 150 –55 ~ +150 Unit V V V mA mA W ?C ?C n Electrical Characteristics (Ta=25?C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CEO V CBO V CEO V EBO h FE V CE(sat) f T C ob Conditions V CE = –60V, I B = 0 I C = –100m A, I E = 0 I C = 1mA, I B = 0 I E = –100m A, I C = 0 V CE = –5V, I C = –10mA I C = –10mA, I B = –1mA V CB = –5V, I E = 10mA, f = 200MHz V CB = –10V, I E = 0, f = 1MHz min –85 –85 –4 60 typ 500 2.7 max –10 – 0.5 Unit m A V V V V MHz pF Unit: mm 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 5.9– 0.2 2.54– 0.15 0.7– 0.1 4.9– 0.2 8.6 – 0.2 0.7 +0.3 –0.2 13.5 – 0.5 3.2 0.45 +0.2 –0.1 1.271.27 0.45 +0.2 –0.1 132 相关器件：

2SA1487

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：SILICON PNP EPITAXIAL PLANER TYPE
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：45.61KB
文件页数：3
PDF阅读：2SA1487.pdf (点击阅读器件资料)

摘要：
1
Transistor
2SA1487
Silicon PNP epitaxial planer type
For video amplifier
n
Features
l High transition frequency f
T
.
l Small collector output capacitance C
ob
.
n
Absolute Maximum Ratings (Ta=25?C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–85
–85
–4
–100
–50
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
?C
?C
n
Electrical Characteristics (Ta=25?C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CE
= –60V, I
B
= 0
I
C
= –100m A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= –100m A, I
C
= 0
V
CE
= –5V, I
C
= –10mA
I
C
= –10mA, I
B
= –1mA
V
CB
= –5V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–85
–85
–4
60
typ
500
2.7
max
–10
– 0.5
Unit
m A
V
V
V
V
MHz
pF
Unit: mm
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
5.9– 0.2
2.54– 0.15
0.7– 0.1
4.9– 0.2
8.6
–
0.2
0.7
+0.3 –0.2
13.5
–
0.5
3.2
0.45
+0.2
–0.1
1.271.27
0.45
+0.2
–0.1
132

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