JANTX2N6798
器件描述：REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
器件厂商：IRF [International Rectifier]
厂商主页：http://www.irf.com/
文件大小：134.48KB，共7页
器件资料摘要：
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 5.5
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current 3.5
I
DM
Pulsed Drain Current ➀ 22
P
D
@ T
C
= 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.20 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy ➁ 54 mJ
I
AR
Avalanche Current ➀ —A
E
AR
Repetitive Avalanche Energy ➀ —m
dv/dt Peak Diode Recovery dv/dt ➂ 4.5 V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 0.98(typical) g
PD -90431C
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
o
C
A
01/22/01
www.irf.com 1
TO-39
Product Summary
Part Number BVDSS RDS(on) ID
IRFF230 200V 0.40Ω 5.5A
Features:
G6E Repetitive Avalanche Ratings
G6E Dynamic dv/dt Rating
G6E Hermetically Sealed
G6E Simple Drive Requirements
G6E Ease of Paralleling
For footnotes refer to the last page
IRFF230
REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798
HEXFET
TRANSISTORS JANTXV2N6798
THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557
200V, N-CHANNEL
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 5.5
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current 3.5
I
DM
Pulsed Drain Current ➀ 22
P
D
@ T
C
= 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.20 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy ➁ 54 mJ
I
AR
Avalanche Current ➀ —A
E
AR
Repetitive Avalanche Energy ➀ —m
dv/dt Peak Diode Recovery dv/dt ➂ 4.5 V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 0.98(typical) g
PD -90431C
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
o
C
A
01/22/01
www.irf.com 1
TO-39
Product Summary
Part Number BVDSS RDS(on) ID
IRFF230 200V 0.40Ω 5.5A
Features:
G6E Repetitive Avalanche Ratings
G6E Dynamic dv/dt Rating
G6E Hermetically Sealed
G6E Simple Drive Requirements
G6E Ease of Paralleling
For footnotes refer to the last page
IRFF230
REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798
HEXFET
TRANSISTORS JANTXV2N6798
THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557
200V, N-CHANNEL