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器件描述：Voltage Stabilizers
器件厂商：VISAY [Vishay Siliconix]
厂商主页：http://www.vishay.com
文件大小：108.51KB
文件页数：4
PDF阅读：ZTE4.7.pdf (点击阅读器件资料)
摘要：
ZTE1.5 thru ZTE5.1
Vishay Semiconductors
formerly General Semiconductor
Document Number 88425 www.vishay.com
02-May-02 1
Features
? Silicon Stabilizer Diodes
? Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits,
providing low dynamic resistance and high-quality
stabilization performance as well as low noise. In the
reverse direction, these devices show the behavior of
forward-biased silicon diodes.
? The end of the ZTE device marked with the cathode ring
is to be connected: ZTE1.5 and ZTE2 to the negative
pole of the supply voltage; ZTE2.4 thru ZTE5.1 to the
positive pole of the supply voltage.
? These diodes are also available in MiniMELF case with
the type designation LL1.5 … LL 5.1.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging codes/options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape, (52mm tape), 20K/box
DO-204AH (DO-35 Glass)
mi
n. 1.083 (
27.5)
mi
n. 1.083
(
2
7
.
5)
max
. .
150 (
3.8)
max.
?
Cathode
.020 (0.52)
Mark
max.
?
.079 (2.0)
Dimensions are in inches
and (millimeters)
Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Operating Current (see Table “Characteristics”)
Inverse Current IF 100 mA
Power dissipation at Tamb = 25°C Ptot 300
(1)
mW
Junction temperature TJ 150 °C
Storage temperature range TS –55 to +150 °C
Electrical and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
Forward Voltage at IF = 10 mA VF ––1.1 V
Temperature Coefficient of the ZTE1.5, ZTE2 α
VZ
– –26 – 10
–4
/°C
stabilized voltage at IZ = 5 mA ZTE2.4, ZTE5.1 α
VZ
– –34 – 10
–4
/°C
Thermal resistance junction to ambient air RθJA ––400
(1)
°C/W
Voltage Stabilizers
相关器件：ZTE5.1 ZTE4.3 ZTE3.6 ZTE3.9 ZTE3 ZTE3.3 ZTE2.4 ZTE2.7 ZTE2 ZTE1.5
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