SBL1635CT
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器件描述：Low VF Schottky Barrier Rectifiers
器件厂商：SIRECTIFIER [
Sirectifier Semiconductors]
厂商主页：http://www.sirectifier.com
文件大小：103.09KB
文件页数：2
PDF阅读：SBL1635CT.pdf (点击阅读器件资料)
摘要：
SBL1630CT thru SBL1645CT
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
SBL1630CT
SBL1635CT
SBL1640CT
SBL1645CT
VRRM
V
30
35
40
45
VRMS
V
21
24.5
28
31.5
VDC
V
30
35
40
45
Low VF Schottky Barrier Rectifiers
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=95 C
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 8.0A DC (Note 1)VF
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25 C
@TJ=100 C
CJ Typical Junction Capacitance (Note 2)
TSTG Storage Temperature Range
Maximum Ratings
16
250
0.55
0.5
50
350
-55 to +150
A
A
V
Unit
mA
pF
o
o
o
C
o
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
Typical Thermal Resistance (Note 3) 2.5ROJC C/W
o
TJ Operating Temperature Range -55 to +125 C
o
A=Anode, C=Cathode, TAB=Cathode
A
A
C
C(TAB)
A C A
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Dimensions TO-220AB
