SBG1040
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器件描述：Low VF Schottky Barrier Rectifiers
器件厂商：SIRECTIFIER [
Sirectifier Semiconductors]
厂商主页：http://www.sirectifier.com
文件大小：66.72KB
文件页数：2
PDF阅读：SBG1040.pdf (点击阅读器件资料)
摘要：
SBG1030 thru SBG1045
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: D
2
PAK molded plastic
* Polarity: As marked on the body
* Weight: 0.06 ounces, 1.7 grams
SBG1030
SBG1035
SBG1040
SBG1045
VRRM
V
30
35
40
45
VRMS
V
21
24.5
28
31.5
VDC
V
30
35
40
45
A=Anode, C=Cathode, TAB=Cathode
Low VF Schottky Barrier Rectifiers
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=95 C
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 5A DC (Note 1)VF
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25 C
@TJ=100 C
CJ Typical Junction Capacitance (Note 2)
TSTG Storage Temperature Range
Maximum Ratings
10
250
0.60
1.0
50
280
-55 to +150
A
A
V
Unit
mA
pF
o
o
o
C
o
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
Typical Thermal Resistance (Note 3) 3.0ROJC C/W
o
TJ Operating Temperature Range -55 to +125 C
o
C(TAB)
C
A
CA
Dimensions TO-263(D
2
PAK)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .315 .350
E 9.65 10.29 .380 .405
E1 6.22 8.13 .245 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.20 0 .008
R 0.46 0.74 .018 .029
