6N135_08
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器件描述：High Speed Optocoupler, 1 MBd, Phtotdiode with Transistor Output
器件厂商：VISAY [
Vishay Siliconix]
厂商主页：http://www.vishay.com
文件大小：148.35KB
文件页数：8
PDF阅读：6N135_08.pdf (点击阅读器件资料)
摘要：
High Speed Optocoupler, 1 MBd, Phtotdiode with Transistor Output
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83604
168 Rev. 1.5, 07-May-08
6N135/6N136
Vishay Semiconductors
DESCRIPTION
The 6N135 and 6N136 are optocouplers with a GaAIAs
infrared emitting diode, optically coupled with an integrated
photo detector which consists of a photo diode and a
high-speed transistor in a DIP-8 plastic package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible reference
voltages.
FEATURES
? Isolation test voltages: 5300 V
RMS
TTL compatible
High bit rates: 1.0 Mbit/s
High common-mode interference immunity
Bandwidth 2.0 MHz
Open-collector output
External base wiring possible
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
UL1577, file no. E52744 system code H or J, double
protection
DIN EN 60747-5-5 available with option 1
CSA 93751
Note
For additional information on the available options refer to option information.
i179081
1
2
3
4
8
7
6
5
C(VCC)NC
A
C
NC
B(VB)
C(VO)
E(GND)
ORDER INFORMATION
PART REMARKS
6N135 CTR ≥ 7 %, DIP-8
6N136 CTR ≥ 19 %, DIP-8
6N135-X007 CTR ≥ 7 %, SMD-8 (option 7)
6N136-X006 CTR ≥ 19 %, DIP-8 400 mil (option 6)
6N136-X007 CTR ≥ 19 %, SMD-8 (option 7)
6N136-X009 CTR ≥ 19 %, SMD-8 (option 9)
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
5.0 V
Forward current I
F
25 mA
Peak forward current t = 1.0 ms, duty cycle 50 % I
FSM
50 mA
Maximum surge forward current t ≤ 1.0 ?s, 300 pulses/s 1.0 A
Thermal resistance R
th
700 K/W
Power dissipation T
amb
= 70 °C P
diss
45 mW
OUTPUT
Supply voltage V
S
- 0.5 to 15 V
Output voltage V
O
- 0.5 to 15 V
Emitter base voltage V
EBO
5.0 V
Output current I
O
8.0 mA
Maximum Output current 16 mA
Base current I
B
5.0 mA
Thermal resistance 300 K/W
Power dissipation T
amb
= 70 °C P
diss
100 mW
