STPR810D
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器件描述：Ultra Fast Recovery Diodes
器件厂商：SIRECTIFIER [
Sirectifier Semiconductors]
厂商主页：http://www.sirectifier.com
文件大小：74.69KB
文件页数：2
PDF阅读：STPR810D.pdf (点击阅读器件资料)
摘要：
STPR810D thru STPR820D
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Dimensions TO-220AC
STPR810D
STPR820D
VRRM
V
100
200
VRMS
V
70
140
VDC
V
100
200
A=Anode, C=Cathode, TAB=Cathode
CA
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=120 C
IFSM
Non Repetitive Peak Forward Surge Current
Per Diode Sinusoidal (JEDEC METHOD)
TP=10ms
TP=8.3ms
Maximum Forward Voltage
Pulse Width=300us
Duty Cycle
IF=8A @TJ=125 C
IF=16A @TJ=125 C
IF=16A @TJ=25 C
VF
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25 C
@TJ=100 C
CJ Typical Junction Capacitance (Note 1)
TRR Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
TJ, TSTG Operating and Storage Temperature Range
Maximum Ratings
8.0
80
90
0.99
1.20
1.25
50
600
80
30
3.0
-55 to +150
A
A
V
Unit
uA
pF
ns
o
o
o
o
o
o
ROJC C/W
o
C
o
NOTES: 1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
C(TAB)
C
A
Ultra Fast Recovery Diodes
