MBR880L
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器件描述：Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
器件厂商：SIRECTIFIER [
Sirectifier Semiconductors]
厂商主页：http://www.sirectifier.com
文件大小：81.89KB
文件页数：2
PDF阅读：MBR880L.pdf (点击阅读器件资料)
摘要：
MBR870L thru MBR8100L
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=125 C
IFSM
Maximum Ratings
8
230
A
A
Unit
o
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25 C
@TJ=125 C
CJ Typical Junction Capacitance (Note 3)
TJ Operating Temperature Range
0.55
7
2.0
280
-55 to +150
-55 to +175
mA
pF
o
o
Typical Thermal Resistance (Note 2)ROJC C/W
o
C
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Dimensions TO-220AC
CA
MBR870L
MBR880L
MBR890L
MBR8100L
VRRM
V
70
80
90
100
VRMS
V
49
56
63
70
VDC
V
70
80
90
100
A=Anode, C=Cathode, TAB=Cathode
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR) 10000 V/us
C
o
TSTG Storage Temperature Range
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
VF
Maximum Forward
Voltage (Note 1)
IF=8A @TJ=25 C
IF=8A @TJ=125 C
o
o
0.72
0.58
V
C(TAB)
C
A
