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器件描述：Silicon PNP epitaxial planar type(For power amplification)
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：46.39KB
文件页数：2
PDF阅读：2B940A.pdf (点击阅读器件资料)
摘要：
1
Power Transistors
2SB940, 2B940A
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Complementary to 2SD1264 and 2SD1264A
n
Features
l High collector to emitter voltage V
CEO
l Large collector power dissipation P
C
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25?C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–200
–200
–150
–180
–6
–3
–2
30
2
150
–55 to +150
Unit
V
V
V
A
A
W
?C
?C
2SB940
2SB940A
2SB940
2SB940A
T
C
=25 C
Ta=25 C
*
h
FE1
Rank classification
Rank Q P
h
FE1
60 to 140 100 to 240
n
Electrical Characteristics (T
C
=25?C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= –200V, I
E
= 0
V
EB
= –4V, I
C
= 0
I
C
= –50m A, I
E
= 0
I
C
= –5mA, I
B
= 0
I
E
= –500m A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –10V, I
C
= –400mA
V
CE
= –10V, I
C
= –400mA
I
C
= –500mA, I
B
= –50mA
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
min
–200
–150
–180
–6
60
50
typ
30
max
–50
–50
240
–1
–1
Unit
m A
m A
V
V
V
V
V
MHz
2SB940
2SB940A
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0– 0.2
5.5– 0.2
7.5
–
0.2
16.7
–
0.3
0.7
–
0.1
14.0
–
0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4– 0.1
1.3– 0.2
0.8– 0.1
2.54– 0.25
5.08– 0.5
213
2.7– 0.2
4.2– 0.2
4.2
–
0.2
f 3.1– 0.1
相关器件：2SD1264A 2SD1264 2SB940
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