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器件描述：ULTRALOW-POWER LOW-NOISE 50-mA LOW-DROPOUT LINEAR REGULATORS
器件厂商：TI [Texas Instruments]
厂商主页：http://www.ti.com/
文件大小：315.3KB
文件页数：17
PDF阅读：195D106x0016x2T.pdf (点击阅读器件资料)
摘要：
TPS79015, TPS79018, TPS79025, TPS79028, TPS79030
ULTRALOW-POWER LOW-NOISE 50-mA
LOW-DROPOUT LINEAR REGULATORS
SLVS299B – SEPTEMBER 2000 – REVISED MAY 2001
1POST OFFICE BOX 655303 ? DALLAS, TEXAS 75265
C0068 50-mA Low-Dropout Regulator
C0068 Available in 1.5-V, 1.8-V, 2.5-V, 2.8-V, 3.0-V
C0068 Output Noise Typically 56 ?V
RMS
(TPS79030)
C0068 Only 17 ?A Quiescent Current at 50 mA
C0068 1 ?A Quiescent Current in Standby Mode
C0068 Dropout Voltage Typically 57 mV at 50 mA
(TPS79030)
C0068 Over Current Limitation
C0068 –40°C to 125°C Operating Junction
Temperature Range
C0068 5-Pin SOT-23 (DBV) Package
description
The TPS790xx family of low-dropout (LDO)
voltage regulators offers the benefits of
low-dropout voltage, ultralow-power operation,
low-output noise, and miniaturized packaging.
These regulators feature low-dropout voltages
and ultralow quiescent current compared to
conventional LDO regulators. An internal resistor,
in conjunction with an external bypass capacitor,
creates a low-pass filter to reduce the noise. The
TPS79030 exhibits only 56 ?V
RMS
of output
voltage noise using 0.01 ?F bypass and 10 ?F
output capacitors. Offered in a 5-terminal small
outline integrated-circuit SOT-23 package, the
TPS790xx series devices are ideal for
micropower operations, low output noise, and
where board space is limited.
The usual PNP pass transistor has been replaced
by a PMOS pass element. Because the PMOS
pass element behaves as a low-value resistor, the
dropout voltage is very low, typically 57 mV at
50 mA of load current (TPS79030), and is directly
proportional to the load current. The quiescent
current is ultralow (17 ?A typically) and is stable
over the entire range of output load current (0 mA
to 50 mA). Intended for use in portable systems
such as laptops and cellular phones, the
ultralow-dropout voltage feature and ultralow-
power operation result in a significant increase in
system battery operating life.
Copyright ? 2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
3
2
4
5
DBV PACKAGE
(TOP VIEW)
1
IN
GND
EN
OUT
BYPASS
0
200
400
600
800
1000
1200
100 1k 10k 100k
f – Frequency – Hz
V
I
= 4 V
C
o
= 4.7 ?F
C
(byp)
= 0.1 ?F
TPS78930
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
I
O
= 1 mA
I
O
= 50 mA
V/
Hz
Output Spectral Noise Density –
?
T
J
– Junction Temperature – °C
15
22
TPS79030
GROUND CURRENT
vs
JUNCTION TEMPERATURE
Ground Current –
A
?
V
I
= 4 V
C
o
= 4.7 ?F
21
20
19
18
17
16
I
O
= 1 mA
I
O
= 50 mA
–40 5–25 20 35 65 110 12550–10 80 95
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