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器件描述：N-Channel RF Amplifiers
器件厂商：ANALOGICTECH [Advanced Analogic Technologies]
厂商主页：http://www.analogictech.com/
文件大小：47.58KB
文件页数：3
PDF阅读：MMBT4416.pdf (点击阅读器件资料)
摘要：
?2002 Fairchild Semiconductor Corporation Rev. A, May 2002
MMBT4416
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Electrical Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 30 V
V
GS
Gate-Source Voltage 30 V
I
G
Gate Current 10 mA
P
D
Total Device Dissipation @T
A
=25°C
Derate above 25°C
225
1.8
mW
mW/°C
R
θJA
Thermal Resistance Junction to Ambient 556 °C/W
T
J
, T
STG
Junction and Storage Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage V
DS
= 0, I
G
= 1?A30 V
I
GSS
Gate Reverse Current V
GS
= 20V, V
DS
= 0
V
GS
= 20V, V
DS
= 0, T
A
= 150°C
1
200
nA
nA
V
GS
(off) Gate Source Cut-off Voltage V
DS
= 15V, I
D
= 1nA 2.5 6 V
V
GS
Gate Source Voltage V
DS
= 15V, I
D
= 0.5mA -1 -5.5 V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current V
GS
= 15V, V
GS
= 0 5 15 ?A
V
GS
(f) Gate-Source Forward Voltage V
DS
= 0, I
G
= 1mA 1 V
Small Signal Characteristics
lY
fs
l Forward Transfer Admittance V
DS
= 15V, V
GS
= 0, f = 1KHz 4500 7500 ?mhos
ly
os
l Output Admittance V
DS
= 15V, V
GS
= 0, f = 1KHz 50 ?mhos
C
iss
Input Capacitance V
DS
= 15V, V
GS
= 0, f = 1MHz 4 PF
Crss
Reverse Transfer Capacitance V
DS
= 15V, V
GS
= 0, f = 1MHz 0.9 PF
C
oss
Output Capacitance V
DS
= 15V, V
GS
= 0, f = 1MHz 2 PF
Functional Characteristics
NF Noise Figure V
DS
= 15V, I
D
= 5mA, R
g
= 100?,
f = 100MHz
2
4
dB
G
ps
Common Source Power Gain V
DS
= 15V, I
D
= 5mA, R
g
= 100?,
f = 100MHz
18
10
dB
MMBT4416
N-Channel RF Amplifiers
? This device is designed for RF amplifiers.
? Sourced from process 50.
SOT-23
D
S
G
Mark: 6A
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