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MB85R1001
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：1 M Bit (128 K 】 8) 器件厂商：ANALOGICTECH [Advanced Analogic Technologies] 厂商主页：http://www.analogictech.com/ 文件大小：136.37KB 文件页数：12 PDF阅读：MB85R1001.pdf (点击阅读器件资料) 摘要： DS05-13103-2E FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM CMOS 1 M Bit (128 K × 8) MB85R1001 ■ DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R1001 is able to retain data without back-up battery. The memory cells used for the MB85R1001 has improved at least 10 10 times of read/write access, significantly outperforming FLASH memory and E 2 PROM in endurance. The MB85R1001 used a pseudo - SRAM interface compatible with conventional asynchronous SRAM. ■ FEATURES ? Bit configuration : 131,072 words x 8bits Read/write endurance : 10 10 times Operating power supply voltage : 3.0 V to 3.6 V Operating temperature range : -20 °C to +85 °C 48-pin, TSOP (1) plastic package ■ PACKAGE 48-pin plastic TSOP(1) (FPT-48P-M25) 相关器件：MB85R1001 MB85R1001PFTN MB85R1001PFTN

MB85R1001

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：1 M Bit (128 K 】 8)
器件厂商：ANALOGICTECH [Advanced Analogic Technologies]
厂商主页：http://www.analogictech.com/
文件大小：136.37KB
文件页数：12
PDF阅读：MB85R1001.pdf (点击阅读器件资料)

摘要：
DS05-13103-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
CMOS
1 M Bit (128 K × 8)
MB85R1001
■ DESCRIPTIONS
The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words
x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, MB85R1001 is able to retain data without back-up battery.
The memory cells used for the MB85R1001 has improved at least 10
10
times of read/write access, significantly
outperforming FLASH memory and E
2
PROM in endurance.
The MB85R1001 used a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
? Bit configuration : 131,072 words x 8bits
Read/write endurance : 10
10
times
Operating power supply voltage : 3.0 V to 3.6 V
Operating temperature range : -20 °C to +85 °C
48-pin, TSOP (1) plastic package
■ PACKAGE
48-pin plastic TSOP(1)
(FPT-48P-M25)

相关器件：MB85R1001 MB85R1001PFTN MB85R1001PFTN

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