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器件描述：Silicon PNP epitaxial planar type
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：84.62KB
文件页数：3
PDF阅读：2SB1172A.pdf (点击阅读器件资料)
摘要：
Power Transistors
1
Publication date: February 2003 SJD00048AED
2SB1172, 2SB1172A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1742, 2SD742A
■ Features
? High forward current transfer ratio h
FE
which has satisfactory linearity
? Low collector-emitter saturation voltage V
CE(sat)
? I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
7.0±0.3
3.5±0.2
0? to 0.15?
12.6
±
0.3
7.2
±
0.3
2.5
±
0.2
2.5
±
0.2
(1.0)
(1.0)
1.0
±
0.2
3.0±0.2
2.0±0.2
1.1±0.1
0.75±0.1
0.9±0.1
0? to 0.15?
0.4±0.1
2.3±0.2
4.6±0.4
123
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Note) Self-supported type package is also prepared.
Rank Q P
h
FE2
70 to 150 120 to 250
Parameter Symbol Rating Unit
Collector-base voltage
2SB1172 V
CBO
?60 V
(Emitter open)
2SB1172A ?80
Collector-emitter voltage
2SB1172 V
CEO
?60 V
(Base open)
2SB1172A ?80
Emitter-base voltage (Collector open) V
EBO
?5V
Collector current I
C
?3A
Peak collector current I
CP
?5A
Collector power dissipation P
C
15 W
T
a
= 25°C 1.3
Junction temperature T
j
150 °C
Storage temperature T
stg
?55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SB1172 V
CEO
I
C
= ?30 mA, I
B
= 0 ?60 V
(Base open)
2SB1172A ?80
Base-emitter voltage V
BE
V
CE
= ?4 V, I
C
= ?3 A ?1.8 V
Collector-emitter cutoff
2SB1172 I
CES
V
CE
= ?60 V, V
BE
= 0 ?200 ?A
current (E-B short)
2SB1172A V
CE
= ?80 V, V
BE
= 0 ?200
Collector-emitter cutoff
2SB1172 I
CEO
V
CE
= ?30 V, I
B
= 0 ?300 ?A
current (Emitter open)
2SB1172A V
CE
= ?60 V, I
B
= 0 ?300
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= ?5 V, I
C
= 0 ?1mA
Forward current transfer ratio h
FE1
*
V
CE
= ?4 V, I
C
= ?1 A 70 250 ?
h
FE2
V
CE
= ?4 V, I
C
= ?3 A 10
Collector-emitter saturation voltage V
CE(sat)
I
C
= ?3 A, I
B
= ? 0.375 A ?1.2 V
Transition frequency f
T
V
CE
= ?10 V, I
C
= ? 0.5 A, f = 10 MHz 30 MHz
Turn-on time t
on I
C
= ?1 A, I
B1
= ? 0.1 A, I
B2
= 0.1 A
0.5 ?s
Storage time t
stg
V
CC
= ?50 V 1.2 ?s
Fall time t
f
0.3 ?s
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