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器件描述：Silicon PNP epitaxial planar type
器件厂商：PANASONIC [Panasonic Semiconductor]
厂商主页：http://www.panasonic.co.jp/semicon/e-index.html
文件大小：95.68KB
文件页数：5
PDF阅读：2SA0885.pdf (点击阅读器件资料)
摘要：
Power Transistors
1
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1846
a73 Features
? Output of 3 W can be obtained by a complementary pair with
2SC1846
? TO-126B package which requires no insulation plate for installa-
tion to the heat sink
a73 Absolute Maximum Ratings T
C
= 25°C
1: Emitter
2: Collector
3: Base
TO-126B Package
Unit: mm
a73 Electrical Characteristics T
C
= 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
?45 V
Collector to emitter voltage V
CEO
?35 V
Emitter to base voltage V
EBO
?5V
Peak collector current I
CP
?1.5 A
Collector current I
C
?1A
Collector power dissipation P
C
1.2
*
1
W
5
*
2
Junction temperature T
j
150 °C
Storage temperature T
stg
?55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= ?20 V, I
E
= 0 ? 0.1 ?A
I
CEO
V
CE
= ?20 V, I
B
= 0 ?100 ?A
Emitter cutoff current I
EBO
V
EB
= ?5V, I
C
= 0 ?10 ?A
Collector to base voltage V
CBO
I
C
= ?10 ?A, I
E
= 0 ?45 V
Collector to emitter voltage V
CEO
I
C
= ?2 mA, I
B
= 0 ?35 V
Forward current transfer ratio h
FE1
*
V
CE
= ?10 V, I
C
= ?500 mA 85 340
h
FE2
V
CE
= ?5 V, I
C
= ?1 A 50
Collector to emitter saturation voltage V
CE(sat)
I
C
= ?500 mA, I
B
= ?50 mA ? 0.5 V
Transition frequency f
T
V
CB
= ?10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= ?10 V, I
E
= 0, f = 1 MHz 20 30 pF
Note)
*
: Rank classification
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
Note)
*
1: Without heat sink
*
2: With a 100 × 100 × 2 mm A1 heat sink
8.0
+0.5
–0.1
1.9
±0.1
3.05
±0.13.8
±0.3
11.0
±0.5
16.0
±1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1
Note.) The Part number in the Parenthesis shows conventional part number.
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