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器件描述：25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
器件厂商：INTERSIL [Intersil Corporation]
厂商主页：http://www.intersil.com/cda/home/
文件大小：46.64KB
文件页数：8
PDF阅读：FSF055D1.pdf (点击阅读器件资料)
摘要：
3-95
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright ? Intersil Corporation 1999
June 1998
FSF055D, FSF055R
25A, 60V, 0.020 Ohm, Rad Hard,
SEGR Resistant, N-Channel Power MOSFETs
Features
? 25A, 60V, r
DS(ON)
= 0.020?
? Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
? Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
? Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
? Photo Current
- 6.0nA Per-RAD(Si)/s Typically
? Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Formerly available as type TA17650.
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Symbol
Package
TO-254AA
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSF055D1
10K TXV FSF055D3
100K Commercial FSF055R1
100K TXV FSF055R3
100K Space FSF055R4
D
G
S
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
S
G
D
File Number 4052.2
相关器件：FSF055R4 FSF055R3 FSF055R1 FSF055R FSF055D3 FSF055D
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