TQP7M9101 3-pin SOT-89 Package
W High Linearity Amplifier Functional Block Diagram
Applications GND
4
Repeaters
Mobile Infrastructure 1 2 3
CDMA / WCDMA / LTE RF IN GND RF OUT
General Purpose Wireless
Product Features
400-4000 MHz
+25 dBm P1dB
+39.5 dBm Output IP3
17.5 dB Gain @ 2140 MHz
+5V Single Supply, 87 mA Current
No output matching required
Internal RF overdrive protection
Internal DC overvoltage protection
On chip ESD protection
SOT-89 Package
General Description Pin Configuration
The TQP7M9101 is a high-linearity driver amplifier in a Pin # Symbol
standard SOT-89 surface mount package. This
InGaP/GaAs HBT delivers high performance across a 1 RF Input
broad range of frequencies with +40 dBm OIP3 and +25
dBm P1dB while only consuming 87 mA quiescent 3 RF Output / Vcc
current. All devices are 100% RF and DC tested.
2, 4 Ground
The TQP7M9101 incorporates on-chip features that
differentiate it from other products in the market. The RF Ordering Information
output is internally matched in to 50 ohms. Only input
matching is required for optimal performance in specific Part No. Description
frequency bands making the component easy for design
engineers to implement in their systems. The amplifier TQP7M9101 0.25 W High Linearity Amplifier
integrates an on-chip DC over-voltage and RF over-drive
protection. This protects the amplifier from electrical DC TQP7M9101-PCB900 TQP7M9101 869-960 MHz EVB
voltage surges and high input RF input power levels that
may occur in a system. On-chip ESD protection allows TQP7M9101-PCB2140 TQP7M9101 2.11-2.17 GHz EVB
the amplifier to have a very robust Class 2 HBM ESD
rating.
The TQP7M9101 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device an
excellent candidate for transceiver line cards in current
and next generation multi-carrier 3G / 4G base stations.
Standard T/R size = 1000 pieces on a 7" reel.
Advanced Data Sheet: Rev D 09/19/11 - 1 of 1 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9101
W High Linearity Amplifier
Specifications
Absolute Maximum Ratings Recommended Operating Conditions
Parameter Rating Parameter Min Typ Max Units
Storage Temperature -65 to +150 C Vcc +3 +5 +5.25 V
-40 85 C
Device Voltage,Vcc +8 V Tcase 160 C
Maximum Input Power Tj (for>106 hours MTTF)
+23 dBm
Operation of this device outside the parameter ranges given Electrical specifications are measured at specified test conditions.
above may cause permanent damage. Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: +25C, +5V Vsupply, in a tuned application circuit
Parameter Conditions Min Typical Max Units
Operational Frequency Range 400 4000 MHz
MHz
Test Frequency 2140 71 dB
dB
Gain 17.5 dB
dBm
Input Return Loss 15 dBm
dBm
Output Return Loss 13.5 dB
V
Output P1dB +25 mA
C/W
Output IP3 See Note 1. +39.5
WCDMA Pout @ -55 dBc ACLR +14.5
Noise Figure 3.9
Vcc 5
Quiescent Current, Icq 87
Thermal Resistance (jnc to case) jc
Notes
1. OIP3 measured with two tones at an output power of +8 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using 2:1 rule.
Advanced Data Sheet: Rev D 09/19/11 - 2 of 2 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9101
W High Linearity Amplifier
Device Characterization Data
Gain vs Frequency Input Smith Chart Output Smith Chart
40 Maximum Stable Gain (GMAX) 1 4 GHz
30
Gain (dB) 20 0.8 4 GHz 0.4 GHz
10
0 Insertion Gain (S21) 0.6
-10 0.4
1 2 3 4 0.2
0
0
-1 -0.75-0.5-0.2-50.2 0 0.25 0.5 0.75 1
0.4 GHz -0.4
-0.6
-0.8
-1
Frequency (GHz)
Note: The gain for the unmatched device in a 50 ohm system is shown as the trace labeled "Insertion Gain (S21)". In a circuit tuned
for a particular frequency band, it is expected that actual gain will be higher, up to the Maximum Stable Gain (GMAX).
S-Parameter Data
Vcc = +5 V, Icc = 87 mA, T = +25C, unmatched 50 Ohm system, reference plane at device leads
Freq S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
(MHz) -3.74 -154.94 16.08 32.65
172.65 -30.84 -4.47 155.03
400 -6.02 149.89
-6.63 147.55
600 -2.43 -174.00 16.93 152.42 -28.85 13.25 -7.05 144.48
-7.29 142.81
800 -2.00 175.84 16.72 137.72 -28.64 3.42 -7.67 139.67
-7.92 136.04
1000 -1.81 167.43 16.29 123.90 -28.38 -4.74 -8.05 132.86
-8.05 129.68
1200 -1.71 160.50 15.71 112.48 -28.45 -10.23 -7.96 125.67
-7.47 122.90
1400 -1.68 155.82 15.15 102.29 -28.29 -15.72 -7.49 122.21
-7.71 119.34
1600 -1.66 149.16 14.58 91.96 -28.34 -19.66 -7.92 116.57
-7.87 114.37
1800 -1.65 143.36 13.98 82.32 -28.40 -25.64 -7.85 106.77
-7.32 100.14
2000 -1.56 137.28 13.45 72.43 -28.25 -30.76 -6.75 96.77
-6.53 95.94
2200 -1.60 131.41 12.80 64.37 -28.52 -35.06
2400 -1.43 126.29 12.14 56.45 -28.43 -39.47
2600 -1.41 122.01 11.52 48.81 -28.73 -42.87
2800 -1.43 117.57 10.99 41.39 -28.68 -47.17
3000 -1.45 114.12 10.53 34.73 -28.78 -49.96
3200 -1.36 109.38 10.15 27.42 -28.85 -52.90
3400 -1.40 103.72 9.69 19.90 -29.00 -59.40
3600 -1.32 98.51 8.99 12.40 -29.04 -63.10
3800 -1.19 93.06 8.49 5.24 -29.04 -68.03
4000 -1.11 89.37 8.02 -0.57 -29.02 -70.86
Advanced Data Sheet: Rev D 09/19/11 - 3 of 3 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9101
W High Linearity Amplifier
Application Circuit 869-960 MHz
1071363AW REV - 1071363PC REV -
+VCC
GND
SOT89 EVAL. BRD., 1/2 WATT
Notes:
1. See PC Board Layout, page 8 for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 resistors (C2,R1,R4) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. Critical component placement locations:
Distance from U1 Pin 1 (left edge) to C5 (right edge): 410 mils (19.0 deg. at 900 MHz)
Distance from U1 Pin 1 (left edge) to R1 (right edge): 115 mils (5.3 deg. at 900 MHz)
Distance from U1 Pin 3 (right edge) to R2 (left edge): 270 mils (12.5 deg. at 900 MHz)
Bill of Material
Ref Des Value Description Manuf. Part Number
n/a n/a Printed Circuit Board TriQuint 1071363
142-0701-851
J1, J2 n/a RF SMA Connector Johnson Comp. TQP7M9101
U1 n/a Amplifier, SOT-89 pkg. TriQuint
R1, C2, R4 0 Resistor, Chip, 0603, 5%, 1/16W various 0805CS-330XJLB
L1 33 nH Inductor, 0805, 5%, Coilcraft CS Series Coilcraft 06032U5R6BAT2A
C1 5.6 pF Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG AVX
R2, C3 100 pF Cap., Chip, 5%, 50V, NPO/COG various 06032U3R9BAT2A
C4 1.0 uF Cap., Chip, 10%, 10V, X5R various
C5 3.9 pF Cap., Chip, 0603, +/-0.1pF. 200V NPO/COG AVX
J3, J4 n/a Solder Turret various
Advanced Data Sheet: Rev D 09/19/11 - 4 of 4 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9101
W High Linearity Amplifier
Typical Performance 869-960 MHz
Frequency MHz 869 920 960
Gain dB 20.2 20.4 20.1
17 14
Input Return Loss dB 12 23 17
+24.4 +24.4
Output Return Loss dB 18 +38.6 +38.2
+13.4 +13.5
Output P1dB dBm +24.3 4.0 3.9
+5
Output IP3 (+8 dBm/tone, f = 1 MHz) dBm +39.2 87
WCDMA Channel Power (at -55 dBc ACLR) [1] dBm +12.7
Noise Figure dB 4.0
Supply Voltage, Vcc V
Quiescent Collector Current, Icq mA
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots 869-960 MHz
Gain vs. Frequency Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency
-5
23 0 -10 -40C
-15 +25C
22 -40C -5 -40C -20 +85C
21 +25C -25
+25C Return Loss (dB) +85C Return Loss (dB) -30
+85C -10 860
Gain (dB) -15 27
26
20 25
-20
19 -25
18 -30
860
860 880 900 920 940 960 880 900 920 940 960 880 900 920 940 960
44
Freq (MHz) 42 Axis Title Axis Title
40
ACLR Vs. Output Power 38 OIP3 Vs. Pout/Tone P1dB vs. Frequency
36
-35
W-CDMA 3GPP Test Model 1+64 DPCH Freq.=920 MHz Freq.=920 MHz
1 MHz Tone Spacing
-40 PAR = 10.2 dB @ 0.01% Probability -40C
3.84 MHz BW +25C
+85C
-45 +85C P1dB (dBm)
ACLR (dBc) OIP3 (dBm) +25C
-50 -40C
+85C
24
+25C
-55
-40C
-60 23
-65 34 22
6
11 12 13 14 15 16 17 8 10 12 14 16 860 880 900 920 940 960
44
Pout (dBm) 42 Pout/Tone (dBm) Frequency (MHz)
ACLR Vs. Output Power OIP3 Vs. Pout/Tone Output Power vs. Input Power
-35 26
W-CDMA 3GPP Test Model 1+64 DPCH Temp.=+25C 1 MHz Tone Spacing Freq.= 920 MHz
Temp.=+25C
-40 PAR = 10.2 dB @ 0.01% Probability 24
3.84 MHz BW
ACLR (dBc) -45 960 MHz OIP3 (dBm) 960 MHz Pout (dBm)
920 MHz
920 MHz 40 869 MHz 22
869 MHz
-50 -40C
38 20 +25C
+85C
-55
-60 36 18
-65 34 16
11 12 13 14 15 16 17 6 8 10 12 14 16 -3 -1 1 3 5 7
Pout (dBm) Pout/Tone (dBm) Pin (dBm)
Advanced Data Sheet: Rev D 09/19/11 - 5 of 5 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9101
W High Linearity Amplifier
Application Circuit 2110-2170 MHz
1071363AW REV - 1071363PC REV -
+VCC
GND
SOT89 EVAL. BRD., 1/2 WATT
Notes:
1. See PC Board Layout, page 8 for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 resistors (C1,R2,R4) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. Critical component placement locations:
Distance from U1 Pin 1 (left edge) to R8 (right edge): 40 mils (4.4 deg. at 2140 MHz)
Distance from U1 Pin 1 (left edge) to R1 (right edge): 115 mils (12.7 deg. at 2140 MHz)
Distance from U1 Pin 3 (right edge) to C2 (left edge): 450 mils (49.8 deg. at 2140 MHz)
Bill of Material
Ref Des Value Description Manuf. Part Number
n/a n/a Printed Circuit Board TriQuint 1071363
142-0701-851
J1, J2 n/a RF SMA Connector Johnson Comp. TQP7M9101
U1 n/a Amplifier, SOT-89 pkg. TriQuint
C1, R2, R4 0 Resistor, Chip, 0603, 5%, 1/16W various 0805CS-180XJLB
L1 18 nH Inductor, 0805, 5%, Coilcraft CS Series Coilcraft 06032U1R8BAT2A
R1 1.8 pF Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG AVX 06032U1R0BAT2A
R8 1.0 pF Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG AVX 06032U100FAT2A
C2 10 pF Cap., Chip, 0603, +/-1%. 200V NPO/COG AVX
C3 22 pF Cap., Chip, 5%, 50V, NPO/COG various
C4 1.0 uF Cap., Chip, 10%, 10V, X5R various
J3, J4 n/a Solder Turret various
Advanced Data Sheet: Rev D 09/19/11 - 6 of 6 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9101
W High Linearity Amplifier
Typical Performance 2110-2170 MHz
Frequency MHz 2110 2140 2170
Gain dB 17.6 17.5 17.4
Input Return Loss dB 15 15 15
Output Return Loss dB 14 13.5 13
Output P1dB dBm +24.8 +24.8 +24.6
Output IP3 (+8 dBm/tone, f = 1 MHz) dBm +39.5 +39.5 +39.5
WCDMA Channel Power (at -55 dBc ACLR) 1 dBm +14.5 +14.5 +14.5
Noise Figure dB 4.0 3.9 4.1
Supply Voltage, Vcc V +5
Quiescent Collector Current, Icq mA 87
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots 2110-2170 MHz
Gain vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency
20 0 0
19 -40C
+25C -5 -5
Gain (dB) +85C Retun Loss (dB) -40C Retun Loss (dB) -40C
18
+25C +25C
-10 +85C -10 +85C
17
16 -15 -15
15 -20 2120 2130 2140 2150 2160 2170 -20
2110 2120 2130 2140 2150 2160 2170 2110 Freq (MHz) 2110 2120 2130 2140 2150 2160 2170
Freq (MHz) Freq (MHz)
44 OIP3 Vs. Pout/Tone
ACLR Vs. Output Power 42 P1dB vs. Frequency
Freq.=2140 MHz
-35 1 MHz Tone Spacing 27
W-CDMA 3GPP Test Model 1+64 DPCH Freq.= 2140 MHz
-40 PAR = 10.2 dB @ 0.01% Probability 26 -40C
3.84 MHz BW +25C
ACLR (dBc) -45 OIP3 (dBm) P1dB (dBm) +85C
40 25
-50 +85C
+25C
+85C 38 24
+25C
-55 -40C
-60 -40C 36 23
-65 34 22
2110 2120 2130 2140 2150 2160 2170
11 12 13 14 15 16 17 6 8 10 12 14 16 Frequency (MHz)
Pout (dBm) Pout/Tone (dBm) Output Power vs. Input Power over Temp
ACLR Vs. Output Power OIP3 Vs. Pout/Tone 30
-35 42
W-CDMA 3GPP Test Model 1+64 DPCH Temp.=+25C W-CDMA 3GPP Test Model 1+64 DPCH 1 MHz Tone Spacing
Temp.=+25C
-40 PAR = 10.2 dB @ 0.01% Probability PAR = 10.2 dB @ 0.01% Probability 27
3.84 MHz BW
41 3.84 MHz BW
ACLR (dBc) -45 OIP3 (dBm) Pout (dBm) -40C
40 24 +25C
-50 2170 MHz +85C
2140 MHz
39 21
-55 2110 MHz
2170 MHz
-60 2140 MHz 38 18
2110 MHz
-65 37 15
11 12 13 14 15 16 17 6 8 10 12 14 16 0 3 6 9 12 15
Pout (dBm) Pout/Tone (dBm) Pin (dBm)
Advanced Data Sheet: Rev D 09/19/11 - 7 of 7 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9101
W High Linearity Amplifier
Pin Configuration and Description
GND
4
1 2 3
RF IN GND RF OUT
Pin Symbol Description
RF Input. Requires conjugate match for optimal performance.
1 RF IN RF/DC Ground Connection
RF Output, matched to 50 ohms. External DC Block and supply voltage is required.
2, 4 GND
3 RFout / Vcc
Applications Information 1071363AW REV - 1071363PC REV -
+VCC
PC Board Layout
GND
PCB Material (stackup):
1 oz. Cu top layer SOT89 EVAL. BRD., 1/2 WATT
0.014 inch Nelco N-4000-13, r=3.7
1 oz. Cu MIDDLE layer 1 Disclaimer: Subject to change without notice
Core Nelco N-4000-13 Connecting the Digital World to the Global Network
1 oz. Cu middle layer 2
0.014 inch Nelco N-4000-13
1 oz. Cu bottom layer
Finished board thickness is 0.062.006
50 ohm line dimensions: width = .031", spacing = .035".
The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB
land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary
from supplier to supplier, careful process development is
recommended.
Advanced Data Sheet: Rev D 09/19/11 - 8 of 8 -
2011 TriQuint Semiconductor, Inc.
TQP7M9101
W High Linearity Amplifier
Mechanical Information
Package Information and Dimensions
This package is lead-free/RoHS-
compliant. The plating material on the
leads is NiPdAu. It is compatible with 7M9101
both lead-free (maximum 260 C reflow
temperature) and lead (maximum 245 C
reflow temperature) soldering processes.
The component will be marked with a
"7M9101" designator with an
alphanumeric lot code on the top surface
of package.
Mounting Configuration
All dimensions are in millimeters (inches). Angles are in degrees.
Notes:
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and
have a final plated thru diameter of .25 mm (.010").
2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
3. RF trace width depends upon the PC board material and construction.
4. Use 1 oz. Copper minimum.
Advanced Data Sheet: Rev D 09/19/11 - 9 of 9 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9101 Solderability
W High Linearity Amplifier Compatible with the latest version of J-STD-020, Lead
Product Compliance Information free solder, 260
ESD Information
This part is compliant with EU 2002/95/EC RoHS
ESD Rating: Class 2 directive (Restrictions on the Use of Certain Hazardous
Value: >2000V to <4000V Substances in Electrical and Electronic Equipment).
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114 This product also has the following attributes:
Lead Free
ESD Rating: Class IV Halogen Free (Chlorine, Bromine)
Value: >2000V Antimony Free
Test: Charged Device Model (CDM) TBBP-A (C15H12Br402) Free
Standard: JEDEC Standard JESD22-C101 PFOS Free
SVHC Free
MSL Rating
The part is rated Moisture Sensitivity Level 3 at 260C per
JEDEC standard IPC/JEDEC J-STD-020.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com Tel: +1.503.615.9000
Email: info-sales@tqs.com Fax: +1.503.615.8902
For technical questions and application information:
Email: sjcapplications.engineering@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Advanced Data Sheet: Rev D 09/19/11 - 10 of 10 Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9102 3-pin SOT-89 Package
W High Linearity Amplifier Functional Block Diagram
Applications GND
4
Repeaters
Mobile Infrastructure 1 2 3
CDMA / WCDMA / LTE RF IN GND RF OUT
General Purpose Wireless
Product Features
400-4000 MHz
+27.5 dBm P1dB
+44 dBm Output IP3
17.8 dB Gain @ 2140 MHz
+5V Single Supply, 135 mA Current
Internal RF overdrive protection
Internal DC overvoltage protection
On chip ESD protection
SOT-89 Package
General Description Pin Configuration
The TQP7M9102 is a high linearity driver amplifier in a Pin # Symbol
low-cost, RoHS compliant, surface mount package. This
InGaP/GaAs HBT delivers high performance across a 1 RF Input
broad range of frequencies with +44 dBm OIP3 and +27.5
dBm P1dB while only consuming 135 mA quiescent 3 RF Output / Vcc
current. All devices are 100% RF and DC tested.
2, 4 Ground
The TQP7M9102 incorporates on-chip features that
differentiate it from other products in the market. The Ordering Information
amplifier integrates an on-chip DC over-voltage and RF
over-drive protection. This protects the amplifier from
electrical DC voltage surges and high input RF input
power levels that may occur in a system. On-chip ESD
protection allows the amplifier to have a very robust Class
2 HBM ESD rating.
The TQP7M9102 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device an
excellent candidate for transceiver line cards in current
and next generation multi-carrier 3G / 4G base stations.
Part No. Description
TQP7M9102 0.5 W High Linearity Amplifier
TQP7M9102-PCB900 TQP7M9102 869-960MHz EVB
TQP7M9102-PCB2140 TQP7M9102 2.11-2.17GHz EVB
Standard T/R size = 1000 pieces on a 7" reel.
Data Sheet: Rev D 10/04/11 - 1 of 9 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9102
W High Linearity Amplifier
Specifications
Absolute Maximum Ratings Recommended Operating Conditions
Parameter Rating Parameter Min Typ Max Units
Storage Temperature -65 to +150 oC Vdd +4.75 +5 +5.25 V
-40 85 oC
Device Voltage, Vdd +8 V Tcase 160 oC
Maximum Input Power, CW Tj (for>106 hours MTTF)
+27 dBm
Operation of this device outside the parameter ranges given Electrical specifications are measured at specified test conditions.
above may cause permanent damage. Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: +25C, +5V Vsupply, 50 system, tuned application circuit
Parameter Conditions Min Typical Max Units
Operational Frequency Range 400 4000 MHz
MHz
Test Frequency 2140 155 dB
50 dB
Gain 15 17.4 dB
dBm
Input Return Loss 12 dBm
dBm
Output Return Loss 10 dB
V
Output P1dB +26.4 +27.5 mA
oC/W
Output IP3 See Note 1. +41 +43.8
WCDMA Pout @ -50 dBc ACLR See Note 2. +18.5
Noise Figure 3.9
Vcc 5
Quiescent Current, Icq 115 137
Thermal Resistance (jnc to case) jc
Notes
1. OIP3 measured with two tones at an output power of +9 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using 2:1 rule.
2. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Data Sheet: Rev D 10/04/11 - 2 of 9 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9102
W High Linearity Amplifier
Application Circuit 869-960 MHz (TQP7M9102-PCB900)
1071363AW REV - 1071363PC REV -
+VCC J3
J4
GND
C5
L1C4
R4C3
C6U1
C1 R1 R2 C2
SOT89 EVAL. BRD., 1/2 WATT
Notes:
1. See PC Board Layout, page 7 for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 resistor (R4) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. Critical component placement locations:
Distance from U1 Pin 1 (left edge) to C5 (right edge): 255 mils (12.1 deg. at 920 MHz)
Distance from U1 Pin 1 (left edge) to C1 (right edge): 460 mils (21.9 deg. at 920 MHz)
Distance from U1 Pin 3 (right edge) to R2 (left edge): 290 mils (13.8 deg. at 920 MHz)
Distance from U1 Pin 3 (right edge) to C6 (left edge): 370 mils (17.6 deg. at 920 MHz)
Bill of Material
Ref Des Value Description Manuf. Part Number
n/a n/a Printed Circuit Board TriQuint 1071363
TriQuint TQP7M9102
U1 n/a TQP7M9102 Amplifier, SOT-89 pkg. various
R4 0 Resistor, Chip, 0603, 5%, 1/16W various LL1608-FSL2N2S
R1 1.5 Resistor, Chip, 0603, 5%, 1/16W Toko 0805CS-330XJLB
R2 2.2 nH Inductor, 0603, +/-0.3 nH Coilcraft 06032U5R6BAT2A
L1 33 nH Inductor, 0805, 5%, Coilcraft CS Series AVX 06032U2R7BAT2A
C1, C5 5.6 pF Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG AVX
C6 2.7 pF Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG various
C2, C3 various
C4 100 pF Cap., Chip, 5%, 50V, NPO/COG
1.0 uF Cap., Chip, 10%, 10V, X5R
Data Sheet: Rev D 10/04/11 - 3 of 9 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9102
W High Linearity Amplifier
Typical Performance 869-960 MHz
Frequency MHz 869 920 960
Gain dB 21.8 21.9 21.7
Input Return Loss dB -10 -16 -17
Output Return Loss dB -12 -10 -9
Output P1dB dBm +27.3 +27.4 +27.4
Output IP3 (+19 dBm/tone, f = 1 MHz) dBm +42.7 +43.4 +43.9
WCDMA Channel Power (at -50 dBc ACLR) [1] dBm +18.0 +18.2 +18.1
Noise Figure dB 5.9 5.9 5.9
Supply Voltage, Vcc V +5
Quiescent Collector Current, Icq mA 137
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots 869-960 MHz
Gain vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency
24 0 0
-40C -40C
23 +25C -5 -5 +25C
+85C
+85C Return Loss (dB) Return Loss (dB)
Gain (dB) 22 -10 -40C -10
+25C
+85C
21 -15 -15
20 -20 -20
19 -25 -25
860
860 880 900 920 940 960 860 880 900 920 940 960 880 900 920 940 960
30
Freq (MHz) Freq (MHz) 29 Freq (MHz)
28
ACLR Vs. Output Power OIP3 Vs. Pout/Tone P1dB vs. Frequency
-35 46
W-CDMA 3GPP Test Model 1+64 DPCH Freq.=920 MHz Freq.=920 MHz
1 MHz Tone Spacing
-40 PAR = 10.2 dB @ 0.01% Probability -40C
3.84 MHz BW 44 +25C
+85C
ACLR (dBc) -45 OIP3 (dBm) P1dB (dBm)
+85C 42
+25C
-50 +85C
+25C
-40C 40 27
-55 -40C
-60 38 26
-65 36 25
12 13 14 15 16 17 18 19 20
Pout (dBm) 11 13 15 17 19 21 860 880 900 920 940 960
Pout/Tone (dBm) Frequency (MHz)
ACLR Vs. Output Power OIP3 Vs. Pout/Tone Output Power vs. Input Power
-35 46 29
W-CDMA 3GPP Test Model 1+64 DPCH Temp.=+25C 1 MHz Tone Spacing Freq.= 920 MHz
Temp.=+25C
-40 PAR = 10.2 dB @ 0.01% Probability 960 MHz 27
3.84 MHz BW 44
ACLR (dBc) -45 920 MHz OIP3 (dBm) Pout (dBm)
869 MHz
42 25
-50 960 MHz -40C
40 920 MHz 23 +25C
869 MHz +85C
-55
-60 38 21
-65 36 19
12 13 14 15 16 17 18 19 20
Pout (dBm) 11 13 15 17 19 21 -3 -1 1 3 5 7
Pout/Tone (dBm) Pin (dBm)
Data Sheet: Rev D 10/04/11 - 4 of 9 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9102 R4
W High Linearity Amplifier
Application Circuit 2110-2170 MHz (TQP7M9102-PCB2140)
1071363AW REV - 1071363PC REV -
+VCC
GND
L1
R8 C6
SOT89 EVAL. BRD., 1/2 WATT
Notes:
1. See PC Board Layout, page 7 for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 resistors (C1, R2) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. Critical component placement locations:
Distance from U1 Pin 1 (left edge) to R8 (right edge): 40 mils (4.4 deg. at 2140 MHz)
Distance from U1 Pin 1 (left edge) to R1 (right edge): 115 mils (12.7 deg. at 2140 MHz)
Distance from U1 Pin 3 (right edge) to C6 (left edge): 180 mils (19.9 deg. at 2140 MHz)
Distance from U1 Pin 3 (right edge) to C2 (left edge): 450 mils (49.8 deg. at 2140 MHz)
Bill of Material
Ref Des Value Description Manuf. Part Number
n/a n/a Printed Circuit Board TriQuint 1071363
U1 n/a TQP7M9102 Amplifier, SOT-89 pkg. TriQuint TQP7M9102
C1, R2, R4 0 Resistor, Chip, 0603, 5%, 1/16W various
L1 18 nH Inductor, 0805, Coilcraft CS Series Coilcraft 0805CS-180XJLB
R1, R8 1.5 pF Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG AVX 06032U1R5BAT2A
C2 3.3 pF Cap., Chip, 0603, +/-0.1pF. 200V NPO/COG AVX 06032U3R3BAT2A
C3 22 pF Cap., Chip, 5%, 50V, NPO/COG various
C4 1.0 uF Cap., Chip, 10%, 10V, X5R various 06032U0R8BAT2A
C6 0.8 pF Cap., Chip, 0603, +/-0.1pF. 200V NPO/COG AVX
Data Sheet: Rev D 10/04/11 - 5 of 9 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9102
W High Linearity Amplifier
Typical Performance 2110-2170 MHz
Frequency MHz 2110 2140 2170
Gain dB 17.9 17.8 17.7
Input Return Loss dB -12 -12 -11
Output Return Loss dB -12 -11 -10
Output P1dB dBm +27.8 +27.6 +27.4
Output IP3 (+9 dBm/tone, f = 1 MHz) dBm +43.6 +43.5 +43.6
WCDMA Channel Power (at -50 dBc ACLR) [1] dBm +18.5 +18.4 +18.3
Noise Figure dB 3.8 3.9 4.0
Supply Voltage, Vcc V
Quiescent Collector Current, Icq mA 5
137
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots 2110-2170 MHz
Gain vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency
20 0 0
-40C
19 +25C -40C
+25C
+85C -5 -40C -5
Gain (dB) 18 Retun Loss (dB) +25C Retun Loss (dB) +85C
-10 +85C -10
17
16 -15 -15
15 2120 2130 2140 2150 2160 2170 -20 2120 2130 2140 2150 2160 2170 -20 2120 2130 2140 2150 2160 2170
2110 Freq (MHz) 2110 Freq (MHz) 2110 Freq (MHz)
ACLR Vs. Output Power 46 OIP3 Vs. Pout/Tone P1dB vs. Frequency
44
-35 42 Freq.=2140 MHz 30
40 1 MHz Tone Spacing
W-CDMA 3GPP Test Model 1+64 DPCH Freq.= 2140 MHz 38
-40 PAR = 10.2 dB @ 0.01% Probability 7 29 -40C
3.84 MHz BW
+25C
-45 +85C
ACLR (dBc) OIP3 (dBm) P1dB (dBm) 28
-50 +85C 27
+85C +25C
-40C
-55 +25C
-40C
-60 26
-65 25
2110
14 15 16 17 18 19 20 9 11 13 15 17 2120 2130 2140 2150 2160 2170
Frequency (MHz)
Pout (dBm) Pout/Tone (dBm)
ACLR Vs. Output Power OIP3 Vs. Pout/Tone Output Power vs. Input Power
-35 46 29
W-CDMA 3GPP Test Model 1+64 DPCH Temp.=+25C W-CDMA 3GPP Test Model 1+64 DPCH 1 MHz Tone Spacing Freq.=2140 MHz
Temp.=+25C
-40 PAR = 10.2 dB @ 0.01% Probability PAR = 10.2 dB @ 0.01% Probability 27
3.84 MHz BW 3.84 MHz BW
44
ACLR (dBc) -45 OIP3 (dBm) Pout (dBm) -40C
+25C
25
-50 42 +85C
2170 MHz 40 2170 MHz 23
2140 MHz 2140 MHz
-55 38 2110 MHz
7
2110 MHz 21
-60
-65 19
14 15 16 17 18 19 20 9 11 13 15 17 2 4 6 8 10 12
Pout (dBm) Pout/Tone (dBm) Pin (dBm)
Data Sheet: Rev D 10/04/11 - 6 of 9 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9102
W High Linearity Amplifier
Pin Configuration and Description
GND
4
1 2 3
RF IN GND RF OUT
Pin Symbol Description
RF Input. Requires external match for optimal performance. External DC Block
1 RF IN required.
2, 4 GND RF/DC Ground Connection
3 RFout / Vcc RF Output. Requires external match for optimal performance. External DC Block
and supply voltage is required.
Applications Information 1071363AW REV - 1071363PC REV -
+VCC
PC Board Layout
GND
PCB Material (stackup):
1 oz. Cu top layer SOT89 EVAL. BRD., 1/2 WATT
0.014 inch Nelco N-4000-13, r=3.7
1 oz. Cu MIDDLE layer 1 Disclaimer: Subject to change without notice
Core Nelco N-4000-13 Connecting the Digital World to the Global Network
1 oz. Cu middle layer 2
0.014 inch Nelco N-4000-13
1 oz. Cu bottom layer
Finished board thickness is 0.062.006
50 ohm line dimensions: width = .031", spacing = .035".
The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB
land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary
from supplier to supplier, careful process development is
recommended.
Data Sheet: Rev D 10/04/11 - 7 of 9 -
2011 TriQuint Semiconductor, Inc.
TQP7M9102
W High Linearity Amplifier
Mechanical Information
Package Information and Dimensions
This package is lead-free/RoHS-
compliant. The plating material on the
leads is NiPdAu. It is compatible with 7M9102
both lead-free (maximum 260 C reflow
temperature) and lead (maximum 245 C
reflow temperature) soldering processes.
The component will be marked with a
"7M9102" designator with an
alphanumeric lot code on the top surface
of package.
Mounting Configuration
All dimensions are in millimeters (inches). Angles are in degrees.
Notes:
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and
have a final plated thru diameter of .25 mm (.010").
2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
3. RF trace width depends upon the PC board material and construction.
4. Use 1 oz. Copper minimum.
Data Sheet: Rev D 10/04/11 - 8 of 9 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
TQP7M9102 Solderability
W High Linearity Amplifier Compatible with the latest version of J-STD-020, Lead
Product Compliance Information free solder, 260
ESD Information
This part is compliant with EU 2002/95/EC RoHS
ESD Rating: Class 2 directive (Restrictions on the Use of Certain Hazardous
Value: 2000 V and < 4000 V Substances in Electrical and Electronic Equipment).
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114 This product also has the following attributes:
Lead Free
ESD Rating: Class IV Halogen Free (Chlorine, Bromine)
Value: >2000 V Antimony Free
Test: Charged Device Model (CDM) TBBP-A (C15H12Br402) Free
Standard: JEDEC Standard JESD22-C101 PFOS Free
SVHC Free
MSL Rating
Level 3 at +260 C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260C per
JEDEC standard IPC/JEDEC J-STD-020.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com Tel: +1.503.615.9000
Email: info-sales@tqs.com Fax: +1.503.615.8902
For technical questions and application information:
Email: sjcapplications.engineering@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information
contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is
entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and
verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any
use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other
intellectual property rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Data Sheet: Rev D 10/04/11 - 9 of 9 - Disclaimer: Subject to change without notice
2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network
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