JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SS8050
SOT-23
TRANSISTOR (NPN)
FEATURES
Complimentary to SS8550
MARKING: Y1
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
1. BASE
2. EMITTER
3. COLLECTOR
Value
40
25
5
1.5
0.3
150
-55-150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
V
CE
=1V, I
C
= 800mA
I
C
=800mA, I
B
= 80mA
I
C
=800mA, I
B
= 80mA
V
CE
=10V, I
C
= 50mA
f=30MHz
100
40
0.5
1.2
V
V
MHz
Test conditions
I
C
= 100μA, I
E
=0
I
C
= 0.1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=40V, I
E
=0
V
CB
=20V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
=1V, I
C
= 100mA
120
Min
40
25
5
0.1
0.1
0.1
400
Typ
Max
Unit
V
V
V
μA
μA
μA
CLASSIFICATION OF h
FE(1)
Rank
Range
L
120-200
H
200-350
J
300-400
B,Jan,2012
Typical Characterisitics
140
SS8050
h
FE
——
I
C
COMMON EMITTER
V
CE
=1V
T
a
=100
℃
Static Characteristic
500uA
1000
(mA)
120
450uA
400uA
350uA
COMMON
EMITTER
T
a
=25
℃
h
FE
300
I
C
100
COLLECTOR CURRENT
80
300uA
250uA
200uA
DC CURRENT GAIN
T
a
=25
℃
100
60
40
150uA
100uA
I
B
=50uA
30
20
0
0.0
10
0.5
1.0
1.5
2.0
2.5
1
3
10
30
100
300
1000 1500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
V
CEsat
——
I
C
1.2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
300
100
T
a
=100
℃
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
1.0
0.8
T
a
=25
℃
T
a
=100
℃
30
T
a
=25
℃
0.6
10
0.4
3
β=10
1
1
3
10
30
100
300
1000 1500
0.2
1
3
10
30
100
300
β=10
1000 1500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
1500
1000
V
BE
—— I
C
200
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
C
ib
100
300
T
a
=25
℃
(mA)
I
C
C
100
T
a
=100
℃
(pF)
30
COLLCETOR CURRENT
30
CAPACITANCE
C
ob
10
10
T
a
=25
℃
3
3
COMMON EMITTER
V
CE
=1V
0.4
0.6
0.8
1.0
1.2
1
0.1
0.3
1
3
10
20
1
0.2
BASE-EMMITER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
1000
f
T
——
I
C
350
P
C
——
T
a
(MHz)
300
COLLECTOR POWER DISSIPATION
P
C
(mW)
V
CE
=10V
T
a
=25
℃
30
1
10
100
300
f
T
250
100
TRANSITION FREQUENCY
200
30
150
10
100
3
50
1
3
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Jan,2012
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