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SC16315

器件型号:SC16315
器件类别:光电子/LED   
文件大小:4790.98KB,共22页
厂商:士兰微(Silan)

杭州士兰集成电路有限公司是由杭州士兰微电子股份有限公司(沪市600460)出资设立的专业从事硅集成电路和分立器件的制造企业,与母公司士兰微电子有限公司一起构成完整的IDM型企业。公司成立于2001年,是浙江省高新技术企业,地处国家级杭州经济技术开发区。公司规划建设3座FAB工厂,目前已建成2座,年生产能力已超过150万片,设计年生产能力200万片以上。主要生产BIPOLAR、CMOS、BICMOS、VDMOS、BCD等工艺技术的集成电路产品和开关管、稳压管、肖特基二极管等特种分立器件。产品用于各类终端市场应用方案,包括计算机、通讯、能源及电子消费品等市场,产品远销至韩国、日本、美国等地,成为世界多家知名公司的芯片供应商。

体系证书:ISO9001:2008,,ISO14001:2004,ISO/TS16949:2009,GB/T28001-2011

产品:

技术水平:

电路技术:双极CMOS电路,低压BCD电路,高压BCD电路,CMOS电路,双极电路

分立器件技术:晶体管,开关管,肖特基管,稳压管,快恢复管,瞬态电压抑制二极管,MOS晶体管,绝缘栅晶体管

生产能力

士兰集成经过10年的发展,成为技术开发,芯片制造一体的半导体公司。公司已投入运营的两个工厂净化面积10000M² 建有与之配套的动力设施。月产5吋芯片10万片,6吋芯片 5万片。

厂商官网:http://www.silanic.com.cn/
下载文档

器件描述

VFD 驱动/控制电路SC16315

产品简介

功能特点

SC16315是一个FIP(荧光指示板或者真空荧光显示)驱动/控制电路,占空比为1/4~1/12。此电路由16个字符段输出端口,4个栅极输出端口,8个字符段/栅极输出驱动端口,一个显示存储器,一个控制电路和一个键扫描电路组成。串行数据通过三线串行接口输入到SC16315。该电路是单芯片微处理器外设的理想选择。


VFD 驱动/控制电路

参数指标

多种显示模式 (16个字符段 & 12位 ~24个字符段 & 4位)


键扫描(16x2 矩阵)


8阶调光电路


输出电压高


LED 端口 (4 路,最大值20 mA).


驱动输出无需外接电阻(P沟道开漏 + 下拉电阻输出)


串行接口 (CLK,STB,DIN,DOUT)


封装形式:QFP-44-10 X 10-0.8、LQFP-44-10X10-0.8(LA)

应用领域

微型机外设

SC16315产品介绍

SC16315
VFD CONTROLLER/DRIVER
DESCRIPTION
The SC16315 is a FIP (Fluorescent Indicator Panel, or Vacuum
Fluorescent Display) controller/driver that is driven on a 1/4 or 1/12
duty factor. It has 16 segment outputs, 4 grid outputs, 8 segment/grid
outputs, a display memory, a control circuit, and a key scan circuit.
Serial data comes from a three-line serial interface. This FIP
controller/driver is ideal as a peripheral device for a single-chip
microcomputer.
QFP44-10 x10-0.8(S)
FEATURES
* Multiple display modes (16-segment & 12-dight
4-digit).
* Key scanning (16x2 matrix).
* Dimming circuit (eight steps).
* High-voltage output (V
DD
– 35V max).
* LED ports (4 chs., 20 mA max).
* No external resistors necessary for driver outputs (P-ch open-drain
+ pull-down resistor output)
* Serial interface (CLK, STB, DIN, DOUT)
to 24-segment &
ORDERING INFORMATIONS
Device
SC16315
Package
QFP-44-10 X 10-0.8(S)
APPLICATIONS
* Microcomputer peripheral device
BLOCK DIAGRAM
7
6
8
9
DIN
DOUT
Serial
Data
Interface
Command
Decoder
Dimming Circuit
Seg1/
KS1
Segment
Driver
14
Seg16/
KS16
Seg17/
Grid12
29
31
CLK
STB
Display
Memory
24 bits
Output
Latch
Data
Selector
Multiplexed
Driver
Timing
Generator
Seg24/
Grid5
38
42
39
5
OSC
OSC
Key Data
Memory
4-Bits Latch
Grid4
12 Bits
Shift
Register
Grid
Driver
Grid1
LED1
LED4
K1
K2
VDD
VSS
VEE
1
4
10
11
43
44
30
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.12.16
Page 1 of 11
SC16315
ABSOLUTE MAXIMUM RATING
(Unless otherwise specified, T
amb
=25°C, V
SS
=0V)
Characteristics
Logic Supply Voltage
Driver Supply Voltage
Logic Input Voltage
FIP Driver Output Voltage
LED Driver Output Current
FIP Driver Output Current
Power Dissipation
Storage Temperature
Operating Ambient
Temperature
Symbol
V
DD
V
EE
V
I1
V
O2
I
O1
I
O2
P
D
T
STG
T
amb
Value
-0.5 ~ +6.0
V
DD
+ 0.5 ~ V
DD
- 40
-0.5 ~ V
DD
+ 0.5
V
EE
- 0.5 ~ V
DD
+ 0.5
±20
-40 (grid); -15 (segment)
800 *
-65 ~ +150
-40 ~ + 85
Unit
V
V
V
V
mA
mA
mW
°C
°C
* Note: Derate at –6.4 mW/°C at T
amb
=25°C or higher.
RECOMMENDED OPERATING RANGE
(T
amb
= -20 ~ 70
°C,
V
SS
=0V)
Characteristics
Logic Supply Voltage
High-Level Input Voltage
Low-Level Input Voltage
Driver Supply Voltage
dynamic power consumption
Where segment current = 3mA, grid current = 15mA, and LED current = 20mA,
FIP driver dissipation = number of segments x 6 + number of grids/ (number of grids + 1) x 30(mW)
RL dissipation = (V
DD
-V
EE
)
2
/50 x (number of segments + 1) (mW)
LED driver dissipation = number of LEDs x 20(mW)
Dynamic power consumption = V
DD
x 5(mW)
Symbol
V
DD
V
IH
V
IL
V
EE
Min.
3
0.7V
DD
0
0
Typ.
5
--
--
--
Max.
5.5
V
DD
0.3V
DD
V
DD
-35
Unit
V
V
V
V
Maximum power consumption PMAX. = FIP driver dissipation + RL dissipation + LED driver dissipation +
ELECTRICAL CHARACTERISTICS
(T
amb
= 25
°C,
V
DD
=5V, V
SS
=0V, V
EE
=V
DD
-35V)
Characteristics
High-Level Output Voltage
Low-Level Output Voltage
Low-Level Output Voltage
High-Level Output Current
High-Level Output Current
Oscillation Frequency
Symbol
V
OH1
V
OL1
V
OL2
I
OH21
I
OH22
FOSC
Test conditions
LED1- LED4, I
OH1
=-12mA
LED1- LED4, I
OL1
=+15mA
D
OUT
, I
OL2
=4mA
V
O
=V
DD
-2V, Seg1/KS1 to
Seg16/KS16
V
O
=V
DD
-2V, Grid1 to Grid4
Seg17/Grid12 to Seg24/Grid5
R=82KΩ
Min.
V
DD-
1
--
--
-3
-15
300
Typ.
--
--
--
--
--
500
Max.
--
1
0.4
--
--
650
Unit
V
V
V
mA
mA
KHz
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.12.16
Page 2 of 11
SC16315
Characteristics
Schmitt-Trigger Transfer
Voltage(+)
Schmitt-Trigger Transfer
Voltage(-)
Hysteresis Voltage
Input Current
Dynamic Current
Consumption
Symbol
V
T+
VT-
VH
II
I
DDdyn
Test conditions
V
DD
=5V
(DIN,CLK,STB)
V
DD
=5V
(DIN,CLK,STB)
V
DD
=5V
(DIN,CLK,STB)
V
I
=V
DD
or V
SS
Under no load, Display Off
Min.
2.7
0.7
1.4
-
-
Typ.
3.0
1.0
2.0
-
-
Max.
3.3
1.3
-
±1
5
Unit
V
V
V
μA
mA
ELECTRICAL CHARACTERISTICS
(T
amb
= 25
°C,
V
DD
=3.3V, V
SS
=0V, V
EE
=V
DD
-35V)
Characteristics
High-Level Output Voltage
Low-Level Output Voltage
Low-Level Output Voltage
High-Level Output Current
Symbol
V
OH1
V
OL1
V
OL2
I
OH21
Test conditions
LED1-LED4,I
OH1
=-6mA
LED1-LED4,I
OL1
=+15mA
DOUT,I
OL2
=4mA
V
O
=V
DD
-2V,SEG1/KS1
To SEG16/KS16
V
O
=V
DD
-2V, Grid1 to
High-Level Output Current
Oscillation Frequency
Schmitt-Trigger Transfer
Voltage(+)
Schmitt-Trigger Transfer
Voltage(-)
Hysteresis Voltage
Input Current
Dynamic Current
Consumption
I
OH22
FOSC
V
T+
V
T-
V
H
I
I
I
DDdyn
Grid4 ,SEG17/Grid12
To SEG24/Grid5
R=82KΩ
V
DD
=3.3V
(DIN,CLK,STB)
V
DD
=3.3V
(DIN,CLK,STB)
V
DD
=3.3V
(DIN,CLK,STB)
V
I
=V
DD
or V
SS
Under no load
Display Off
300
1.8
0.2
1.0
-
-
500
2.0
0.4
1.6
-
-
650
2.2
0.6
-
±1
3
KHz
V
V
V
μA
mA
-6
-
-
mA
Min.
V
DD
-1
-
-
-1.5
Typ.
-
-
-
-
Max.
-
1
0.4
-
Unit
V
V
V
mA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.12.16
Page 3 of 11
SC16315
PIN CONFIGURATION
Seg24/Grid5
Seg23/Grid6
Seg22/Grid7
Seg21/Grid8
35
Seg20/Grid9
34
33 Seg19/Grid10
32 Seg18/Grid11
31 Seg17/Grid12
30 V
EE
29 Seg16/KS16
28 Seg15/KS15
27 Seg14/KS14
26 Seg13/KS13
25 Seg12/KS12
24 Seg11/KS11
23 Seg10/KS10
12
V
SS
13
V
DD
14
Seg1/KS1
15
Seg2/KS2
16
Seg3/KS3
17
Seg4/KS4
18
Seg5/KS5
19
Seg6/KS6
20
Seg7/KS7
21
Seg8/KS8
22
Seg9/KS9
Grid2
Grid3
40
44
LED1 1
LED2 2
LED3 3
LED4 4
OSC 5
D
OUT
6
D
IN
7
CLK 8
STB 9
KEY1 10
KEY2 11
43
Grid1
V
DD
V
SS
42
41
39
Grid4
38
37
36
SC16315
PIN DESCRIPTION
Pin No.
7
6
Pin Name
DIN
DOUT
low order bit.
Data output pin. Output serial data at the falling edge of the shift clock, starting
from low order bit. This is N-ch open-drain output pin.
Strobe pin. Initializes serial interface at the rising or falling edge of the
SC16315. It then waits for reception of a command. Data input after STB has
9
STB
fallen is processed as a command. While command data is processed, current
processing is stopped, and the serial interface is initialized. While STB is high,
CLK is ignored.
8
5
14 ~ 29
39~42
CLK
OSC
Seg1/KS1
to Seg16/KS16
Grid1 to Grid4
Clock input pin. Reads serial data at the rising edge, and outputs data at the
falling edge.
Oscillator pin. Determine the oscillation frequency by the resistor connecting
this pin and GND (V
SS
).
High-voltage output (segment). Segment output pins (Dual function as key
source).
High-voltage output (grid). Grid output pins.
Description
Data input pin. Input serial data at rising edge of shift clock, starting from the
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.12.16
Page 4 of 11
SC16315
Pin No.
31~38
1 ~4
10 ~ 11
13, 43
12, 44
30
Pin Name
Seg17/Grid12
to Seg24/Grid5
LED1 to LED4
KEY1 to KEY2
V
DD
V
SS
V
EE
Description
High-voltage output (segment/grid). Segment or grid driving.
LED output pin. CMOS output. +20mA max.
Key data input. Data input to these pins is latched at the end of the display
cycle.
Logic power pin. 5V±10%
Logic ground. Connect this pin to system GND.
Pull-down level. V
DD
-35V max.
FUNCTIONAL DESCRIPTION
1. DISPLAY RAM ADDRESS AND DISPLAY MODE
The display RAM stores the data transmitted from an external device to the SC16315 through the serial interface,
and is assigned addresses as follows, in 8 bits unit:
Seg1 Seg4
00H
L
03H
L
06H
L
09H
L
0CH
L
0FH
L
12H
L
15H
L
18H
L
1BH
L
1EH
L
21H
L
Seg8
00H
U
03H
U
06H
U
09H
U
0CH
U
0FH
U
12H
U
15H
U
18H
U
1BH
U
1EH
U
21H
U
Seg12
01H
L
04H
L
07H
L
0AH
L
0DH
L
10H
L
13H
L
16H
L
19H
L
1CH
L
1FH
L
22H
L
b0
Seg16
01H
U
04H
U
07H
U
0AH
U
0DH
U
10H
U
13H
U
16H
U
19H
U
1CH
U
1FH
U
22H
U
b3 b4
XXHL
Lower 4 bits
XXHU
Higher 4 bits
b7
Seg20
02Hv
05H
L
08H
L
0BH
L
0EH
L
11H
L
14H
L
17H
L
1AH
L
1DH
L
20H
L
23H
L
Seg24
02H
U
05H
U
08H
U
0BH
U
0EH
U
11H
U
14H
U
17H
U
1AH
U
1DH
U
20H
U
23H
U
DIG1
DIG2
DIG3
DIG4
DIG5
DIG6
DIG7
DIG8
DIG9
DIG10
DIG11
DIG12
2. KEY MATRIX AND KEY-INPUT DATA STORAGE RAM
The key matrix is made up of a 16 x 2 matrix, as shown below.
KEY1
KEY2
Seg10/KS10
Seg11/KS11
Seg12/KS12
Seg13/KS13
Seg14/KS14
Seg15/KS15
Seg16/KS16
Seg1/KS1
Seg2/KS2
Seg3/KS3
Seg4/KS4
Seg5/KS5
Seg6/KS6
Seg7/KS7
Seg8/KS8
Seg9/KS9
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.12.16
Page 5 of 11
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