S9014T
SOT-523 Plastic-Encapsulate Transistors
S9014T
FEATURES
Small Surface Mount Package
TRANSISTOR (NPN)
SOT–523
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
50
45
5
100
200
625
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
Test conditions
I
C
=100µA, I
E
=0
I
C
=100µA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=50V, I
E
=0
V
CE
=35V, I
B
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CE
=5V,I
C
=10mA , f=30MHz
V
CB
=10V, I
E
=0, f=1MHz
0.58
150
3.5
200
Min
50
45
5
100
100
100
1000
0.3
1
0.7
V
V
V
MHz
pF
Typ
Max
Unit
V
V
V
nA
nA
nA
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
L
200–450
H
450–1000
J6
J7
REV.08
1 of
3
S9014T
Static Characteristic
8
1000
h
FE
——
I
C
COLLECTOR CURRENT I
C
(mA)
20uA
6
COMMON
EMITTER
T
a
=25
℃
T
a
=100
℃
18uA
16uA
14uA
4
DC CURRENT GAIN h
FE
T
a
=25
℃
12uA
10uA
8uA
100
2
6uA
4uA
I
B
=2uA
COMMON EMITTER
V
CE
= 5V
8
10
0.1
1
10
100
0
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1
V
CEsat
——
I
C
2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
1
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
℃
0.1
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β=20
0.01
0.1
1
10
100
0.1
0.1
1
10
β=20
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
100
I
C
—— V
BE
1000
f
T
——
I
C
10
T
a
=100
℃
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
100
T
a
=25
℃
1
10
COMMON EMITTER
V
CE
= 5V
0.1
0.0
0.3
0.6
0.9
1.2
COMMON EMITTER
V
CE
=5V
T
a
=25
℃
1
0.1
1
10
100
BASE-EMMITER VOLTAGE V
BE
(V)
COLLECTOR CURRENT
I
C
(mA)
100
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
250
P
C
——
T
a
CAPACITANCE C (pF)
C
ib
10
COLLECTOR POWER DISSIPATION
P
C
(mW)
1
10
20
200
150
C
ob
1
100
50
0.1
0.1
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
(
℃
)
REV.08
2
of
3
S9014T
REV.08
3
of
3
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