电子工程世界电子工程世界电子工程世界

产品描述

搜索
 

MI5809

器件型号:MI5809
器件类别:分立半导体    MOS(场效应管)   
厂商:Megapower(瑞信)
下载文档

器件描述

漏源电压(Vdss):20V 连续漏极电流(Id)(25°C 时):300mA 栅源极阈值电压:1V @ 250uA 漏源导通电阻:250mΩ @ 500mA,4.5V 最大功率耗散(Ta=25°C):- 类型:N沟道 集成PNP三极管和MOS管

参数
属性参数值
漏源电压(Vdss)20V
连续漏极电流(Id)(25°C 时)300mA
栅源极阈值电压1V @ 250uA
漏源导通电阻250mΩ @ 500mA,4.5V
最大功率耗散(Ta=25°C)-
类型N沟道

MI5809产品介绍

MI5809
-25V -1.2A PNP Low VCEsat Transistor with N-channel Trench MOSFET
General Description
Combination of PNP low VCEsat Breakthrough In Small
Signal transistor and N-channel Trench MOSFET.The
device is housed in a leadless medium power DFN3X2
Surface-Mounted Device (SMD) plastic package.
Features
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board(PCB)
area than for conventional transisitors
Charging circuits
Battery-driven devices
Applications
Loadswitch
Power management
Power switches (e.g.motors.fans)
Simplified outline
8
7
6
5
Pin Description
1
2
3
4
5
6
7
8
9
10
Collector
Emitter
Base
Drain
Gate
Source
Collector
Collector
Collector
Drain
Graphic symbol
1,7,8,9
5
4,10
9
10
1
2
3
4
Top View DFN3X2X0.75
Note:
Pin#9,10 is not GND.
2
3
6
Absolute Maximum Ratings(T
A
=25°C,Unless Otherwise Noted)
Parameter
Drain-Source Voltage (MOSFET)
Collector-Emitter breakdown voltage (PNP Transistor)
Gate-Source Voltage (MOSFET)
Collector-Base breakdown voltage(PNP Transistor)
Emitter-Base breakdown voltage(PNP Transistor)
Continuous Drain Current(MOSFET)
Pulsed Drain Current (MOSFET)
b
a
Units
20
-25
±12
-25
-6
300
800
a
Value
V
mA
Diode Continuous Forward Current (MOSFET)
Collector Current(PNP Transistor)
Total Dissipation (PNP Transistor)
1.7
-2
2.5
150
-55 to 150
260
90
50
°С/W
°С
A
W
Maximum Junction Temperature(PNP Transistor and MOSFET )
Storage Temperature Range(PNP Transistor and MOSFET )
Soldering Recommendation (PeakTemperature)(PNP Transistor and MOSFET)
c
Thermal Resistance-Junction to Ambient At Steady State(MOSFET)
Thermal Resistance-Junction to Ambient At Steady State(PNP Transistor)
Notes:
a.Surface Mounted on 1"x1" FR4 Board.
b.Pulse test;pulse width≤300μs,duty cycle≤2%.
c.Rework Conditions:manual soldering with a soldering iron is not recommended for leadless components.
www.megapower.com.cn
1
Apr.2012 Rev.2.1
MI5809
Packing Information
Device
MI5809
Marking
Tape Width
7"
Reel Size
8mm
Quantity
3000 units
MOSFET Static and Dynamic Characteristics(T
A
=25°C
,
Unless Otherwise Noted)
Parameter
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
=0V,I
DS
=250μA
V
DS
=V
GS
,I
DS
=-250μA
V
DS
=0V, V
GS
=±12V
V
DS
=16V,V
GS
=0V
T
J
=85°C
Drain-Source On-State Resistance
Diode Forward Voltage
R
DS(ON)
V
SD
V
GS
=4.5V,I
DS
=0.5A
V
GS
=2.5V,I
DS
=0.5A
I
SD
=0.5A,V
GS
=0V
0.25
Ω
0.50
0.7
1.3
V
20
V
0.5
0.7
1.0
±10
1
30
μA
μA
Symbol
Test Condition
Min
Typ
Max
Units
www.megapower.com.cn
2
Apr.2012 Rev.2.1
MI5809
PNP Transistor Specifications (T
A
=25°C Unless Otherwise Noted)
Parameter
Collector
-
base breakdown voltage
Collector-emitter breakdown voltage*
Emitter-base breakdown voltage
Collector cut
-
off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test conditions
Min
Typ
Max
Unit
I
C
=-100uA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-100uA,I
C
=0
V
CB
=-
20V
,
I
C
=0
V
EB
=-
6V
,
I
C
=0
V
CE
=-2V,I
C
=-100mA
V
CE
=-2V,I
C
=-100mA
-25
-25
-6.0
-0.1
uA
V
-0.1
300
300
150
15
-30
-220
-250
-350
-300
-0.95
V
DC current gain
*
h
FE
V
CE
=-2V,I
C
=-2A
V
CE
=-2V,I
C
=-6A
I
C
=-0.1A,I
B
=-10mA
I
C
=-1A,I
B
=-20mA
Collector-emitter saturation voltage*
V
CE(sat)
I
C
=-1.5A,I
B
=-50mA
I
C
=-2.5A,I
B
=-150mA
I
C
=-3.5A,I
B
=-350mA
mV
Base-emitter turn-on voltage*
V
BE(on)
V
BE(sat)
V
CE
=-2V,I
C
=-3.5A
I
B
=-350mA,I=-3.5V
V
CE
=-10V,I
C
=-50mA
f=100MHz
V
CB
=-10V,I
C
=-1A
I
B1
=I
B2
=-10mA
Base-emitter saturation voltage*
Transition frequency
Turn-on time
Turn
-
off time
*
Pulse Test
:
Pulse
-1.075
150
40
ns
670
MHz
f
T
t
on
t
off
width
300us, duty cycle
≤2%.
www.megapower.com.cn
3
Apr.2012 Rev.2.1
MI5809
Typical Electrical and Thermal Characteristics
PNP Transistor Performance Curves (T
A
=25°C,unless otherwise noted)
Static Characteristic
-0.35
600
h
FE
COMMON
EMITTER
T
=25
a
h
FE
I
C
-900uA
-0.30
V
CE
= -2V
500
I
C
(A)
-810uA
-720uA
T
=100
a
o
C
-0.25
COLLECTOR CURRENT
-630uA
-0.20
400
-540uA
-450uA
DC CURRENT GAIN
T
=25
a
o
C
300
-0.15
-360uA
-270uA
T
=-45
a
200
o
C
-0.10
-180uA
-0.05
100
I
=-90uA
B
-0.00
-0
-1
-2
-3
-4
-5
-6
0
-0.01
-0.1
-1
-6
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
V
BE
-6
I
C
-1.4
V
BEsat
I
C
V
CE
=-2V
-5
-1.2
β=50
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
I
C
(A)
-4
-1.0
COLLECTOR CURRENT
T
=-45
a
-0.8
-3
T
=100
a
o
C
-2
T
=-45
a
T
=25
a
o
C
o
C
-0.6
T
=25
a
T
=100
a
-1
-0.4
-0
-0.0
-0.7
-1.4
-0.2
-1E-3
-0.01
-0.1
-1
-6
BASE-EMITTER VOLTAGE
V
BE
(V)
COLLECTOR CURRENT
I
C
(A)
V
CEsat
-1
I
C
-1
V
CEsat
β=50
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
V
-0.1
β=100
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
T
=100
a
-0.1
T
=25
a
-0.01
β=50
T
=-45
a
β=10
T
=25
a
-1E-3
-1E-3
-0.01
-0.1
-1
-6
-0.01
-1E-3
-0.01
-0.1
-1
-6
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(mA)
www.megapower.com.cn
4
Apr.2012 Rev.2.1
MI5809
F
t
300
I
c
240
C
ob
/C
ib
V
CB
/V
EB
(MHz)
250
180
200
f=1MHz
IE=0
/
IB=0
T
=25
a
f
T
(pF)
TRANSITION FREQUENCY
Cib
150
CAPACITANCE
C
120
100
Cob
60
50
V
CE
=-10V
T
=25
°С
a
0
-0
-50
-100
0
-0.1
-1
-10
COLLECTOR CURRENT
I
C
(mA)
REVERSE BIAS VOLTAGE
V
(V)
P
c
1.2
Ta
COLLECTOR POWER DISSIPATION
P
c
(W)
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
AMBIENT
TEMPERATURE
T
a
(
°С
)
www.megapower.com.cn
5
Apr.2012 Rev.2.1
小广播

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区知春路23号集成电路设计园量子银座1305 电话:(010)82350740 邮编:100191

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2021 EEWORLD.com.cn, Inc. All rights reserved