电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索
 

MBR25150CT_00001

器件型号:MBR25150CT_00001
器件类别:分立半导体    二极管   
厂商:强茂(PANJIT)

强茂股份有限公司成立于1986年5月,为股票上市公司,并至1997年后,陆续通过ISO/TS-16949、ISO-9001、ISO-14001、OHSAS-18001等国际认证。

强茂拥有半导体上下游整合与自有核心技术的优势,主要从事整流二极体、功率半导体、突波抑制器等分离式元件产品的生产;搭配洞察市场趋势的观察利,不断推出符合市场需求的薄型化封装。

强茂以提供客护更完整的产品服务为宗旨,行销及佈局全球;全球总部位于台湾高雄,在北美、欧洲、日本、中国大六、南韩和台湾台北等地均设有分公司或是办事处提供客护最完整和及时的业务以及技术服务。

厂商官网:http://www.panjit.com.tw/
标准:
下载文档

器件描述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 150V V(RRM), Silicon, TO-220AB,

参数
参数名称属性值
是否Rohs认证符合
厂商名称强茂(PANJIT)
包装说明R-PSFM-T3
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS
应用EFFICIENCY
外壳连接ISOLATED
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.9 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流200 A
元件数量2
相数1
端子数量3
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流12.5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压150 V
最大反向电流50 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED

MBR25150CT_00001产品介绍

MBR2540CT SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage, high frequency inverters
free wheeling, and polarlity protection applications.
• Lead free in comply with EU RoHS 2011/65/EU directives
40 to 200 Volts
CURRENT
25 Amperes
MECHANCEAL DATA
• Case: TO-220AB Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Ma xi mum Re curre nt P e ak Reve rse Vo ltag e
Ma xi mum RMS Vo lta ge
Ma xi mum D C B locki ng Voltag e
Ma xi mum A ve ra ge Fo rwa rd C urre nt (S ee fi g.1 )
P e a k F orward S urg e C urre nt : 8 .3 ms si ng le half si ne -
wa ve supe ri mpo sed on ra te d lo ad (JE D E C me tho d)
Ma xi mum F orward Voltag e a t 1 2.5 A , p er le g
Ma xi mum D C Reve rse Curre nt at Rate d D C
B lo cki ng Vo lta ge
Typi cal The rma l Re si sta nce
Op era ti ng Juncti o n a nd S to ra g e Te mp e ra ture Rang e
T
J
=25
O
C
T
J
=12 5
O
C
S YMB OL
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
θJC
T
J
,T
S TG
MB R25 4 0C T MB R25 4 5C T MB R2 55 0 CT MB R25 6 0C T MB R2 58 0 CT MB R2 59 0 CT MB R2 5 10 0 CT MBR2 5 15 0 CT MBR2 5 20 0 CT
UNITS
V
V
V
A
A
40
28
40
45
31 .5
45
50
35
50
60
42
60
80
56
80
25
200
90
63
90
10 0
70
10 0
1 50
1 05
1 50
200
1 40
200
0 .7
0.75
0 .0 5
20
2
0 .8
0 .9
V
mA
O
C /W
O
-50 to + 1 5 0
-65 to +175
C
NOTES:
Both Bonding and Chip structure are available.
December 26,2012-REV.05
PAGE . 1
MBR2540CT SERIES
RATING AND CHARACTERISTIC CURVES
AVERAGE FORWARD RECTIFIED
CURRENT AMPERES
PEAK FORWARD SURGE CURRENT,
Amps
25.0
20.0
15.0
10.0
5.0
0
0
20
40
60
80
100
120
O
= 40V
= 45-200V
240
210
180
150
120
90
60
30
0
1
2
5
10
20
50
100
8.3ms Single
Half Since-Wave
JEDEC Method
RESISTIVE OR
INDUCTIVE LOAD
140
160
180
CASE TEMPERATURE, C
NO. OF CYCLE AT 60Hz
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON - REPETITIVE SURGE
CURRENT
10
INSTANTANEOUS REVERSE CURRENT, mA
40
40-45V
TC=125
O
C
1.0
FORWARD CURRENT, Amps
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
50-60V
80-100V
150-200V
0.1
TC=75
O
C
0.01
TC=25
O
C
T
J
= 25 C
Pulse Width = 300 us
1% Duty Cycle
O
0 .001
20
40
60
80
100
.4
.5
.6
.7
.8
0.9
1.0
1 .1
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE, %
FORWARD VOLTAGE, VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTICS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
December 26,2012-REV.05
PAGE . 2
MBR2540CT SERIES
Part No_packing code_Version
MBR2540CT_T0_00001
MBR2540CT_00001
MBR2540CT_T0_10001
MBR2540CT_10001
For example :
RB500V-40_R2_00001
Part No.
Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code
XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING
1
st
Code
A
R
B
T
S
L
F
Packing size code
N/A
7"
13"
26mm
52mm
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
Version Code
XXXXX
2
nd
Code
HF or RoHS
1
st
Code 2
nd
~5
th
Code
0
1
2
X
Y
U
D
HF
RoHS
0
1
serial number
serial number
December 26,2012-REV.05
PAGE . 3
MBR2540CT SERIES
Disclaimer
Reproducing and modifying information of the document is prohibited without permission
from Panjit International Inc..
Panjit International Inc. reserves the rights to make changes of the content herein the
document anytime without notification. Please refer to our website for the latest
document.
Panjit International Inc. disclaims any and all liability arising out of the application or use of
any product including damages incidentally and consequentially occurred.
Panjit International Inc. does not assume any and all implied warranties, including warranties
of fitness for particular purpose, non-infringement and merchantability.
Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.
Panjit International Inc. makes no representation or warranty that such applications will be
suitable for the specified use without further testing or modification.
The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving
or life-sustaining, such as medical instruments, transportation equipment, aerospace
machinery et cetera. Customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages
resulting from such improper use or sale.
Since Panjit uses lot number as the tracking base, please provide the lot number for tracking
when complaining.
December 26,2012-REV.05
PAGE . 4
EEPROM的寿命问题 ?
本帖最后由yhyworld于2020-1-509:29编辑 如下图,为ST的64KbitEEPROM:M24C64-W,有四百万次的写循环。现在,只用了40Kbit,还有24Kbit没用。 使用频率是每小时写一次。请问: 使用2年后,没有用的24Kbit的寿命是否受到影响?还是四百万次吗?谢谢! 附图 EEPROM的寿命问题?...
yhyworld 综合技术交流
队列深度 (QueueDepth) 对硬盘性能的影响
在做性能测试的时候,主机端有时会成为瓶颈。有时,可能即使弄了很猛的主机,但是 测试结果还是达不到最优,可以注意一下主机端对于挂过来的卷的QueueDepth设置。 下面的文章是将硬盘的NCQ技术的,有涉及到这方面的一些基础东西: NCQ技术深度解析: 纵观我们电脑中的储存设备,对机械设备驱动性能要求最强的当属硬盘了。机械设备所 固有的属性在很大程度上制约了数据的读取速度,从而影响了硬盘的性能。要想提升硬盘的 性能,我们通常会想到两个最为有效的方法:对硬盘机械的物理性进行...
白丁 综合技术交流
恩智浦简化电机控制系统的LPC1500微控制器产品推广活动邀您参加!
本帖最后由Sur于2014-5-618:40编辑 当我们致力于诸多商业和工业应用中增强运动控制的方案,我们看到最近大量电机的开发正在蓬勃发展。无论无传感器的无刷直流(BLDC)电机,还是带磁场定向控制(FOC)的永磁同步电机(PMSM),都具有能效更高、噪声更低、可靠性更佳的特点。但是,它们更加难以控制而且经常需要花费更多时间和精力来调整与校准。而种类更为繁多的低成本电机则进一步加剧了这种现状。 为有助于简化控制并轻松调整和校准不同种类的电机,恩智浦最新推出基于Cortex-M3...
Sur 综合技术交流
“surefire”手电筒拆解
最近手里的手电筒坏了不少,前几天正好看到网上有卖就补了2个,三十几元包邮。收到后装上电池工作正常,这个手电筒有5种模式,一种快闪,一种慢闪(疑似SOS信号)和三个亮度等级的常亮。手到货后有一个“调焦”比较紧,给它上点油也顺便发几张拆解的照片。这个手电筒拿在手里我觉得质量一搬,真货可能的性不大,全部拆下后基本就是下边这些组件。灯珠特写,做工比较粗糙。灯珠铝基板下边又放了一个铝片,使用导热硅胶连接。部分镜头和灯珠底板的侧面照片。主板左侧的...
littleshrimp 综合技术交流
小广播

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区知春路23号集成电路设计园量子银座1305 电话:(010)82350740 邮编:100191

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2022 EEWORLD.com.cn, Inc. All rights reserved