KIA
SEMICONDUCTORS
7.5A 650V
N-CHANNEL MOSFET
4665A
1.
General Description
This Power MOSFET is produced using KIA’s advanced planar stripe DMOS technology. This advanced
technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices
are well suited for high efficiency switched mode power supplies, active power factor correction based on
half bridge topology.
2.
Features
n
n
n
n
n
n
7.5A, 650V, R
DS
(on) typ. = 1.1Ω@V
GS
= 10 V
Low gate charge ( typical 25nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 6
Rev 1.0 MAR 2017
KIA
SEMICONDUCTORS
7.5A 650V
N-CHANNEL MOSFET
4665A
4.
Ordering Information
Part Number
KNF4665A
KNP4665A
Package
TO-220F
TO-220
Brand
KIA
KIA
5.
Absolute maximum ratings
(T
C
= 25ºC , unless otherwise noted)
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain Current -Continuous (T
C
= 25 ºC)
-Continuous (T
C
= 100 ºC)
Drain Current -Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
KNP4665A
7.5
4.5
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Power Dissipation (T
C
= 25 ºC)
-Derate above 25 ºC
Operating and Storage Temperature Range
147
1.18
KNF4665A
650
7.5 *
4.5*
30*
±30
230
7.5
21
4.5
40
0.32
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/ºC
ºC
ºC
-55 to +150
300
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
6.
Thermal Characteristics
Symbol
R
θJC
R
θJS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
KNP4665A
0.85
0.5
62.5
KNF4665A
3.1
--
62.5
Units
ºC /W
ºC /W
ºC /W
2 of 6
Rev 1.0 MAR 2017
KIA
SEMICONDUCTORS
7.5A 650V
N-CHANNEL MOSFET
4665A
7.
Electrical characteristics
Symbol
B
VDSS
△BV
DSS
/
△T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
Qrr
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 7.5 A
V
GS
= 0 V, I
S
= 7.5 A,
dI
F
/ dt = 100 A/us
(Note 4)
V
DS
= 520 V, I
D
= 7.5 A,
V
GS
= 10 V
(Note 4, 5)
V
DD
= 325 V, I
D
= 7.5 A,
R
G
= 25
Ω
(Note 4.5)
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
(T
C
= 25ºC , unless otherwise noted)
Test Conditions
Min Typ Max
V
GS
= 0 V, I
D
= 250 uA
I
D
= 250 uA,
Referenced to 25 ºC
V
DS
= 650 V, V
GS
= 0 V
V
DS
= 520 V, T
C
= 125 ºC
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 uA
V
GS
= 10 V, I
D
= 3.75 A
V
DS
= 40 V, I
D
= 3.75 A
(Note 4)
650
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.65
--
--
--
--
--
1.1
6.5
970
40
9
28
21
100
42
25
5.5
10
--
--
--
580
5.3
--
--
1
10
100
-100
4.0
1.4
--
--
--
--
--
--
--
--
--
--
--
7.5
30
1.4
--
--
Units
V
V/ºC
uA
uA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
nC
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics and Maximum Ratings
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.8mH, I
AS
= 7.5A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
7.5A, di/dt
≤
200A/us, V
DD
≤
B
VDSS
, Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300us, Duty cycle
≤
2%
5. Essentially independent of operating temperature
3 of 6
Rev 1.0 MAR 2017
KIA
SEMICONDUCTORS
7.5A 650V
N-CHANNEL MOSFET
4665A
7.
Typical Characteristics
KIA
SEMICONDUCTORS
7.5A 650V
N-CHANNEL MOSFET
4665A
Rev 1.0 MAR 2017
4 of 6
5 of 6
Rev 1.0 MAR 2017
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