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KND3508A

器件型号:KND3508A
器件类别:分立半导体    MOS(场效应管)   
厂商:KIA 半导体
深圳市可易亚半导体科技有限公司是一家专业从事中、大功率场效应管、快速恢复二极管、三端稳压管开发设计,集研发、生产和销售为一体的国家高新技术企业。
厂商官网:http://www.kiaic.com/page/qiyejianjie.htm
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器件描述

漏源电压(Vdss):80V 连续漏极电流(Id)(25°C 时):70A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:12mΩ @ 35A,10V 最大功率耗散(Ta=25°C):- 类型:N沟道 N沟道,80V,70A,11mΩ@10V,场效应管,MOSFET

参数
属性参数值
漏源电压(Vdss)80V
连续漏极电流(Id)(25°C 时)70A
栅源极阈值电压4V @ 250uA
漏源导通电阻12mΩ @ 35A,10V
最大功率耗散(Ta=25°C)-
类型N沟道

KND3508A产品介绍

KIA
SEMICONDUCTORS
70A,80V
N-CHANNEL MOSFET
3508A
1.
Features
n
n
n
n
R
DS(on)
=9.5mΩ(typ.)@ V
GS
=10V
100% avalanche tested
Reliable and rugged
Lead free and green device available(RoHS Compliant)
2.
Applications
n
n
Switching application
Power management for inverter systems
3.Symbol
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 6
Rev 1.0 Aug. 2018
KIA
SEMICONDUCTORS
70A,80V
N-CHANNEL MOSFET
3508A
4.
Ordering Information
Part Number
KNB3508A
KND3508A
KNP3508A
Package
TO-263
TO-252
TO-220
Brand
KIA
KIA
KIA
5.
Switching Time Test Circuit and Waveforms
5.
Absolute maximum ratings
(T
A
=25°C,unless otherwise noted)
Rating
Units
To-220/263
80
±25
175
-55 to175
70
46
240
70
60
36
To-252
V
V
ºC
ºC
A
A
A
A
Parameter
Drain-source voltage
Gate-source voltage
Maximum junction temperature
Storage temperature range
Continuous drain current
Pulsed drain current
Avalanche current
T
C
=25ºC
T
C
=100ºC
T
C
=25ºC
Symbol
V
DSS
V
GSS
T
J
T
STG
I
D3
I
DP
I
AS
2 of 6
Rev 1.0 Aug. 2018
KIA
SEMICONDUCTORS
70A,80V
N-CHANNEL MOSFET
3508A
6.
Electrical characteristics
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state resistance
Gate resistance
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(on)
R
g
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
=30V,I
DS
=1A,
R
L
=30Ω,V
GEN
=-10V
R
G
=6Ω
V
DS
=30V,V
GS
=10V
I
DS
=35A
(T
A
=25°C,unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
V
GS
=0V,I
DS
=250uA
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
D
=250μA
V
GS
=+25V, V
DS
=0V
V
GS
=10V,I
DS
=35A
V
DS
=0V, V
GS
=0V,f=1MHz
I
SD
=20A, V
GS
=0V
I
SD
=35A ,
dl
SD
/dt=100A/μs
V
DS
=30V,V
GS
=0V,
f=1MHz
80
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3.0
-
9.5
1.5
0.8
44
60
2900
290
175
14
11
51
22
55
12
16
-
1
30
4.0
+100
11
-
1.3
-
-
-
-
-
-
-
-
-
-
--
--
nC
ns
pF
V
μA
V
nA
Ω
V
nS
nC
Note : 1. Pulse test; pulse width<300us duty cycle<2%.
2. Guaranteed by design, not subject to production testing.
3 of 6
Rev 1.0 Aug. 2018
KIA
SEMICONDUCTORS
70A,80V
N-CHANNEL MOSFET
3508A
7.Test
circuits and waveforms
4 of 6
Rev 1.0 Aug. 2018
KIA
SEMICONDUCTORS
70A,80V
N-CHANNEL MOSFET
3508A
5 of 6
Rev 1.0 Aug. 2018
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