KIA
SEMICONDUCTORS
SEMICONDUCTOR
S
90A，30V
N-CHANNEL MOSFET
100N03
1.Description
This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This
advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switched mode power supplies, active power factor correction
based on half bridge topology.
2.
Features
n
n
n
n
R
DS(on)
=3.1mΩ@ V
GS
=10V
Improved dv/dt capability
Fast switching
Green device available
3.Symbol
Pin
1
2
3
Function
Gate
Drain
Source
1 of 5
Rev 1.0 OCT 2014
KIA
SEMICONDUCTORS
SEMICONDUCTOR
S
90A，30V
N-CHANNEL MOSFET
100N03
4.
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulse drain current (note 1)
Avalanche current (note 2)
Avalanche energy, (note 2)
T
C
=25
ºC
Maximum power dissipation
Derate above 25
ºC
P
D
T
J
,T
STG
T
C
=25ºC
T
C
=100ºC
T
C
=25ºC
Symbol
V
DSS
V
GSS
I
D
I
DP
I
AS
E
AS
(T
A
=25°C,unless otherwise noted)
Rating
Units
30
+20
90
57
360
50
125
88
0.59
-55-175
V
V
A
A
A
A
mJ
W
W/℃
℃
Junction & storage temperature range
5.
Thermal characteristics
Parameter
Thermal resistance, Junction-ambient
Thermal resistance, Junction-case
Symbol
R
θJA
R
θJC
Rating
62
1.7
Unit
ºC/W
ºC/W
2 of 5
Rev 1.0 OCT 2014
KIA
SEMICONDUCTORS
SEMICONDUCTOR
S
90A，30V
N-CHANNEL MOSFET
100N03
Test Conditions
V
GS
=0V,I
DS
=250μA
Reference to 25°C, I
D
=1mA
(T
A
=25°C,unless otherwise noted)
Min
Typ
Max
Units
6.
Electrical characteristics
Parameter
Drain-source breakdown voltage
BV
DSS
temperature coefficient
/△T
J
Zero gate voltage drain current
Gate threshold voltage
V
GS(th)
temperature coefficient
Gate leakage current
Drain-source on-resistance(note3)
Forward transconductance
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time(note 3,4)
Rise time(note 3,4)
Turn-off delay time(note 3,4)
Fall time(note 3,4)
Total gate charge(note 3,4)
Gate-source charge(note 3,4)
Gate-drain charge(note 3,4)
Single pulse avalanche energy
Continuous source current
Pulsed source current (note 3)
Diode forward voltage(note 3)
Reverse recovery time
Reverse recovery charge
I
DSS
V
GS(th)
△V
GS(th)
I
GSS
R
DS(on)
gfs
R
g
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
EAS
I
S
I
SM
V
SD
t
rr
Q
rr
V
DS
=15V, V
GS
=4.5V
I
DS
=24A
V
DD
=25V,L=0.1mH,I
AS
=24A
V
GS
=V
DS
=0V,force current
V
GS
=0V,I
S
=1A,T
J
=25°C
V
DS
=30V,I
S
=1A,
di/dt=100A/μs
V
DD
=15V, I
D
=15A,
R
G
=3.3Ω,V
GS
=10V
V
DS
=30V, V
GS
=0V, T
J
=25°C
V
DS
=24V, V
GS
=0V, T
J
=125°C
V
DS
=V
GS
, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=+20V, V
DS
=0V
V
GS
=10V,I
D
=24A
V
GS
=4.5V,I
D
=12A
V
DS
=10V,I
D
=10A
V
DS
=0V, V
GS
=0V,f=1MHz
V
DS
=25V,V
GS
=0V,
f=1MHz
-
-
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
31
-
-
-
-
-
-
-
1.6
-5
-
3.1
4.5
15.5
2
2200
280
177
12.6
19.5
42.8
13.2
24
4.2
13
-
-
-
-
-
-
1
10
2.5
-
+100
4
6
-
4
3190
410
260
24
37
81
25
34
6
18
-
90
360
1
-
-
mJ
A
A
V
nS
nC
nC
nS
pF
μA
V
mV/°C
nA
mΩ
S
Ω
Symbol
BV
DSS
△BV
DSS
-
0.03
-
V/°C
30
-
-
V
Note:1: Repetitive rating, pulse width limited by max junction temperature.
2: V
DD
=25V, V
GS
=10V, L=0.1mH, I
AS
=50A, R
G
=25Ω, starting T
J
=25°C
3: The data tested by pulsed, pulse width≦300us, duty cycle
≦2%
4: Essentially independent of operating temperature.
3 of 5
Rev 1.0 OCT 2014
KIA
SEMICONDUCTORS
SEMICONDUCTOR
S
90A，30V
N-CHANNEL MOSFET
100N03
7.Test
circuits and waveforms
4 of 5
Rev 1.0 OCT 2014
KIA
SEMICONDUCTORS
SEMICONDUCTOR
S
90A，30V
N-CHANNEL MOSFET
100N03
5 of 5
Rev 1.0 OCT 2014
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